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Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. High resolution THz gas spectrometer based on semiconductor and superconductor devices 2017 EPJ Web Conf. 10.1051/epjconf/201713202001 details   doi
Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers 2017 IEEE Trans. Terahertz Sci. Technol. 10.1109/Tthz.2016.2630845 details   doi
Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. Photon absorption near the gap frequency in a hot electron bolometer 2017 IEEE Trans. Appl. Supercond. 10.1109/Tasc.2016.2630032 details   doi
Goltsman, Gregory Superconducting thin film nanostructures as terahertz and infrared heterodyne and direct detectors 2017 16th ISEC details   url
Pentin, Ivan; Finkel, Matvey; Maslennikov, Sergey; Vakhtomin, Yuri; Smirnov, Konstantin; Kaurova, Nataliya; Goltsman, Gregory Superconducting hot-electron-bolometer mixers for the mid-IR 2017 Rus. J. Radio Electron. details   url
Zhang, J.; Verevkin, A.; Slysz, W.; Chulkova, G.; Korneev, A.; Lipatov, A.; Okunev, O.; Gol’tsman, G. N.; Sobolewski, Roman Time-resolved characterization of NbN superconducting single-photon optical detectors 2017 Proc. SPIE 10.1117/12.2283811 details   doi
Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G. On-chip controlled placement of nanodiamonds with a nitrogen-vacancy color centers (NV) 2018 J. Phys.: Conf. Ser. 10.1088/1742-6596/1124/5/051046 details   doi
Мошкова, М. А.; Дивочий, А. В.; Морозов, П. В.; Золотов, Ф. И.; Вахтомин, Ю. Б.; Смирнов, К. В. Высокоэффективные NBN однофотонные детекторы с разрешением числа фотонов 2018 Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. details   url
Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. Resonant terahertz detection using graphene plasmons 2018 Nat. Commun. 10.1038/s41467-018-07848-w details   doi
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer 2018 Microelectronic Engineering 10.1016/j.mee.2018.03.008 details   doi
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