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Author Title Year (up) Publication Volume Pages
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer 2018 Microelectronic Engineering 195 26-31
Tretyakov, I. V.; Anfertyev, V. A.; Revin, L. S.; Kaurova, N. S.; Voronov, B. M.; Vaks, V. L.; Goltsman, G. N. Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator 2018 Radiophys. Quant. Electron. 60 988-992
Tretyakov, Ivan; Kaurova, N.; Voronov, B. M.; Goltsman, G. N. About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers 2018 Proc. 29th Int. Symp. Space Terahertz Technol. 113
Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. Technology for NbN HEB based multipixel matrix of THz range 2018 EPJ Web Conf. 195 05011
Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors 2018 Phys. Status Solidi B 255 1700227 (1 to 6)
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. Room temperature silicon detector for IR range coated with Ag2S quantum dots 2019 Phys. Status Solidi RRL 13 1900187-(1-6)
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. Silicon room temperature IR detectors coated with Ag2S quantum dots 2019 Proc. IWQO 369-371
Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform 2019 EPJ Web Conf. 220 03012
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer 2019 Supercond. Sci. Technol. 32 075003
Tovpeko, N. A.; Trifonov, A. V.; Semenov, A. V.; Antipov, S. V.; Kaurova, N. S.; Titova, N. A.; Goltsman, G. N. Bandwidth performance of a THz normal metal TiN bolometer-mixer 2019 Proc. 30th Int. Symp. Space Terahertz Technol. 102-103
Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. Room temperature silicon detector for IR range coated with Ag2S quantum dots 2019 IRMMW-THz
Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector 2020 Nanomaterials (Basel) 10 1-12
Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. Planar Schottky diode with a Γ-shaped anode suspended bridge 2020 J. Phys.: Conf. Ser. 1695 012154
Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector 2020 J. Phys.: Conf. Ser. 1695 012156
Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. Electron energy relaxation in disordered superconducting NbN films 2020 Phys. Rev. B 102 054501 (1 to 15)