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Korneeva, Y.; Vodolazov, D.; Florya, I.; Manova, N.; Smirnov, E.; Korneev, A.; Mikhailov, M.; Goltsman, G.; Klapwijk, T. M.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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Title |
Single photon detection in micron scale NbN and α-MoSi superconducting strips |
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Conference Article |
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2018 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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Volume |
190 |
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04010 (1 to 2) |
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SSPD |
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We experimentally demonstrate the single photon detection in straight micrometer-wide NbN and α-MoSi bridges. Width of the bridges is 2 µm, while the wavelength of the photon changes from 408 to 1550 nm and critical current exceeds 50% of the depairing current. Obtained results offer the alternative route for design of detectors without resonator and meander structure and indirectly confirm vortex assisted mechanism of single photon detection. |
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1319 |
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Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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Quantum photonic integrated circuits with waveguide integrated superconducting nanowire single-photon detectors |
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Conference Article |
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2018 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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190 |
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02004 (1 to 2) |
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waveguide SSPD, SNSPD |
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We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also. |
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1320 |
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Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G. |
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Title |
Electron-phonon relaxation time in ultrathin tungsten silicon film |
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Miscellaneous |
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2018 |
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arXiv |
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WSi film |
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Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K. |
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Duplicated as 1341 |
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1340 |
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Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneev, A. A.; Chulkova, G. M.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Goltsman, G. N. |
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Title |
Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film |
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Miscellaneous |
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2018 |
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arXiv |
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WSi films, diffusion constant, SSPD, SNSPD |
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We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau{e-ph} = 140-190 ps at TC = 3.4 K, supporting the results of earlier measurements by independent techniques. |
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Duplicated as 1305 |
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1341 |
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Kuznetsov, K. A.; Kornienko, V. V.; Vakhtomin, Y. B.; Pentin, I. V.; Smirnov, K. V.; Kitaeva, G. K. |
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Title |
Generation and detection of optical-terahertz biphotons via spontaneous parametric downconversion |
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Conference Article |
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2018 |
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Proc. ICLO |
Abbreviated Journal |
Proc. ICLO |
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303 |
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NbN HEB applications |
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We study spontaneous parametric downconversion (SPDC) in the strongly non-degenerate regime when the idler wave hits the terahertz range. By using the hot-electron bolometer, for the first time the SPDC-generated idler-wave photons were directly detected in the terahertz frequency range. Spectrum of corresponding signal photons was measured using standard technique by the CCD camera. Possible applications of correlated optical-terahertz biphotons are discussed. |
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International Conference Laser Optics |
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1806 |
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Райтович, А. А.; Пентин, И. В.; Золотов, Ф. И.; Селезнев, В. А.; Вахтомин, Ю. Б.; Смирнов, К. В. |
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Title |
Время энергетической релаксации электронов в сверхпроводниковых VN наноструктурах |
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Conference Article |
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2018 |
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Сборник трудов 13 Всероссийской конференции молодых ученых |
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236-238 |
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VN films |
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Саратовский филиал ИРЭ им. В.А. Котельникова РАН |
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Техно-Декор |
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Russian |
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Наноэлектроника, нанофотоника и нелинейная физика |
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http://nnnph.ru/data/documents/Sborni-trudov-NNNF-2018.pdf |
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1807 |
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Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N. |
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Superconducting diamond films as perspective material for direct THz detectors |
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Abstract |
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2017 |
Publication |
Proc. 28th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 28th Int. Symp. Space Terahertz Technol. |
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82 |
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KID, HEB, superconducting diamond films, boron-doped diamond films, Al, TiN, Si substrates, NEP |
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Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013. |
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1173 |
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Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Title |
Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver |
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Conference Article |
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Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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27 |
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4 |
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6 |
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Multi-pixel, HEB, silicon-on-insulator, horn array |
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We report on the development of a multi-pixel
Hot Electron Bolometer (HEB) receiver fabricated using
silicon membrane technology. The receiver comprises a
2 × 2 array of four HEB mixers, fabricated on a single
chip. The HEB mixer chip is based on a superconducting
NbN thin film deposited on top of the silicon-on-insulator
(SOI) substrate. The thicknesses of the device layer and
handling layer of the SOI substrate are 20 μm and 300 μm
respectively. The thickness of the device layer is chosen
such that it corresponds to a quarter-wave in silicon at
1.35 THz. The HEB mixer is integrated with a bow-tie
antenna structure, in turn designed for coupling to a
circular waveguide, |
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RPLAB @ kovalyuk @ |
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1111 |
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Lobanov, Y. V.; Shcherbatenko, M. L.; Semenov, A. V.; Kovalyuk, V. V.; Korneev, A. A.; Goltsman, G. N.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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Heterodyne spectroscopy with superconducting single-photon detector |
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Conference Article |
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2017 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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132 |
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01005 |
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SSPD mixer, SNSPD |
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We demonstrate successful operation of a Superconducting Single Photon Detector (SSPD) as the core element in a heterodyne receiver. Irradiating the SSPD by both a local oscillator power and signal power simultaneously, we observed beat signal at the intermediate frequency of a few MHz. Gain bandwidth was found to coincide with the detector single pulse width, where the latter depends on the detector kinetic inductance, determined by the superconducting nanowire length. |
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1205 |
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Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory |
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Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption |
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Conference Article |
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2017 |
Publication |
IEEE Transactions on Applied Superconductivity |
Abbreviated Journal |
IEEE Transactions on Applied Superconductiv |
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27 |
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4 |
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5 |
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Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors |
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Abstract |
In superconducting single-photon detectors SSPD
the efficiency of local suppression of superconductivity and hotspot
formation is controlled by diffusivity and electron-phonon
interaction time. Here we selected a material, 3.6-nm-thick MoNx
film, which features diffusivity close to those of NbN traditionally
used for SSPD fabrication, but with electron-phonon interaction
time an order of magnitude larger. In MoNx detectors we study
the dependence of detection efficiency on bias current, photon
energy, and strip width and compare it with NbN SSPD. We
observe non-linear current-energy dependence in MoNx SSPD
and more pronounced plateaus in dependences of detection
efficiency on bias current which we attribute to longer electronphonon
interaction time. |
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RPLAB @ kovalyuk @ |
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1114 |
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