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Author Kawamura, J.; Blundell, R.; Tong, C-Y. E.; Gol'tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. url  openurl
  Title Phonon-cooled NbN HEB mixers for submillimeter wavelengths Type Conference Article
  Year (up) 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 8th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 23-28  
  Keywords waveguide NbN HEB mixers  
  Abstract The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz.  
  Address  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 275  
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Author Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. url  doi
openurl 
  Title Gain and noise bandwidth of NbN hot-electron bolometric mixers Type Journal Article
  Year (up) 1997 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 70 Issue 24 Pages 3296-3298  
  Keywords NbN HEB mixers, conversion loss, conversion gain, U-factor technique  
  Abstract We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 279  
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Author Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. doi  openurl
  Title Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers Type Conference Article
  Year (up) 1997 Publication Proc. 27th Eur. Microwave Conf. Abbreviated Journal  
  Volume 2 Issue Pages 972-977  
  Keywords HEB mixer, fabrication process  
  Abstract The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.  
  Address Jerusalem, Israel  
  Corporate Author Thesis  
  Publisher IEEE Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 27th Eur. Microwave Conf.  
  Notes Approved no  
  Call Number Serial 1075  
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Author Gousev, Y. P.; Semenov, A. D.; Goghidze, I. G.; Pechen, E. V.; Varlashkin, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. url  doi
openurl 
  Title Current dependent noise in a YBa2Cu3O7-δ hot-electron bolometer Type Journal Article
  Year (up) 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 7 Issue 2 Pages 3556-3559  
  Keywords YBCO HTS HEB mixers  
  Abstract We investigated the output noise of a YBa2Cu3O7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1592  
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Author Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R. url  doi
openurl 
  Title Noise characteristics of a NbN hot-electron mixer at 2.5 THz Type Journal Article
  Year (up) 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 7 Issue 2 Pages 3572-3575  
  Keywords NbN HEB mixers  
  Abstract The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1594  
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Author Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. url  doi
openurl 
  Title 2.5 THz NbN hot electron mixer with integrated tapered slot antenna Type Journal Article
  Year (up) 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 7 Issue 2 Pages 3548-3551  
  Keywords NbN HEB mixers  
  Abstract A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1595  
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Author Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Fast NbN superconducting switch controlled by optical radiation Type Journal Article
  Year (up) 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 7 Issue 2 Pages 3734-3737  
  Keywords NbN superconducting switch  
  Abstract The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits.  
  Address  
  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1596  
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Author Svechnikov, S.; Gol'tsman, G.; Voronov, B.; Yagoubov, P.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekstrom, H.; Kollberg, E.; Semenov, A.; Gousev, Y.; Renk, K. url  doi
openurl 
  Title Spiral antenna NbN hot-electron bolometer mixer at submm frequencies Type Journal Article
  Year (up) 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 7 Issue 2 Pages 3395-3398  
  Keywords NbN HEB mixers  
  Abstract We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB.  
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  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1597  
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Author Semenov, A. D.; Heusinger, M. A.; Renk, K. F.; Menschikov, E.; Sergeev, A. V.; Elant'ev, A. I.; Goghidze, I. G.; Gol'tsman, G. N. url  doi
openurl 
  Title Influence of phonon trapping on the performance of NbN kinetic inductance detectors Type Journal Article
  Year (up) 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 7 Issue 2 Pages 3083-3086  
  Keywords NbN KID  
  Abstract Voltage and microwave photoresponse of NbN thin films to modulated and pulsed optical radiation reveals, far below the superconducting transition, a response time consistent with the lifetime of nonequilibrium quasiparticles. We show that even in 5 nm thick films at 4.2 K the phonon trapping is significant resulting in a quasiparticle lifetime of a few nanoseconds that is an order of magnitude larger than the recombination time. Values and temperature dependence of the quasiparticle lifetime obey the Bardeen-Cooper-Schrieffer theory and are in quantitative agreement with the electron-phonon relaxation rate determined from the resistive response near the superconducting transition. We discuss a positive effect of the phonon trapping on the performance of kinetic inductance detectors.  
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  Corporate Author Thesis  
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  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1598  
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Author Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. url  openurl
  Title Optical coupling and conversion gain for NbN HEB mixer at THz frequencies Type Conference Article
  Year (up) 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.  
  Volume Issue Pages 47-50  
  Keywords NbN HEB mixers  
  Abstract  
  Address Charlottesville, Virginia  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1601  
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. url  openurl
  Title Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure Type Conference Article
  Year (up) 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.  
  Volume Issue Pages 163-166  
  Keywords S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1603  
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Author Ekström, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. url  openurl
  Title Phonon cooled ultra thin NbN hot electron bolometer mixers at 620 GHz Type Conference Article
  Year (up) 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 8th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 29-35  
  Keywords NbN HEB mixers  
  Abstract We have measured the noise performance and gain bandwidth of 35 A thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. A double-sideband receiver noise temperature less than 1300 K has been obtained with a 3 dB bandwidth of GHz. The gain bandwidth is 3.2 GHz. A lower noise temperature of 1100 K has been achieved with an improved set-up. The mixer output noise dominated by thermal fluctuations is about 50-60 K, and the SSB receiver and intrinsic conversion gain is about -18 and -12 dB, respectively. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1604  
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Author Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Svechnikov, S. I.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M. url  openurl
  Title NbN hot electron bolometric mixer for 2.5 THz: the phonon cooled version Type Conference Article
  Year (up) 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 8th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 258-271  
  Keywords NbN HEB mixers  
  Abstract We describe an investigation of a NbN HEB mixer for 2.5 THz. NbN HEBs are phonon-cooled de-. vices which are expected, according to theory, to achieve up to 10 GHz IF conversion gain bandwidth. We have developed an antenna coupled device using a log-periodic antenna and a silicon lens. We have demon- strated that sufficient LO power can be coupled to the device in order to bring it to the optimum mixer oper- ating point. The LO power required is less than 1 microwatts as measured directly at the device. We also describe the impedance characteristics of NbN devices and compare them with theory. The experimental results agree with theory except for the imaginary part of the impedance at very low frequencies as was demonstrated by other groups.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1605  
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Author Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. url  openurl
  Title Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz Type Conference Article
  Year (up) 1998 Publication Proc. 9th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 9th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 105-114  
  Keywords NbN HEB mixers  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1587  
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Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. url  doi
openurl 
  Title Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies Type Journal Article
  Year (up) 1998 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 73 Issue 19 Pages 2814-2816  
  Keywords NbN HEB mixers, noise temperature, local oscillator power  
  Abstract In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 911  
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