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Золотов, Ф. И., & Смирнов, К. В. (2019). Особенности осаждения разупорядоченных сверхтонких плёнок нитрида ванадия. In Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского (pp. 204–205). МИЭМ НИУ ВШЭ.
Abstract: В работе изучены особенности роста сверхтонких плёнок нитрида ванадия толщиной ~10 нм. Обнаружено, что при изменении температуры подложки и общего давления газов в процессе осаждения плёнок меняется значение их поверхностного сопротивления вблизи перехода к сверхпроводящему состоянию.
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Komrakova, S., Javadzade, J., Vorobyov, V., Bolshedvorskii, S., Soshenko, V., Akimov, A., et al. (2018). On-chip controlled placement of nanodiamonds with a nitrogen-vacancy color centers (NV). In J. Phys.: Conf. Ser. (Vol. 1124, 051046 (1 to 4)).
Abstract: Here we studied the fabrication technique of a kilopixel array of nanodiamonds with a nitrogen-vacancy color centers (NV) on top of the chip and measured the second-order correlation function deep, clearly demonstrated the presence of single-photon sources. The controlled position of nanodiamonds, determined from the measurement of second-order correlation fiction, was realize, as well as the yield of optimized technique equals 12.5% is shown.
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Мошкова, М. А., Дивочий, А. В., Морозов, П. В., Золотов, Ф. И., Вахтомин, Ю. Б., & Смирнов, К. В. (2018). Высокоэффективные NBN однофотонные детекторы с разрешением числа фотонов. In Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. (pp. 400–401).
Abstract: Разработаны и исследованы сверхпроводниковые однофотонные детекторы, способные к разрешению до 3-х фотонов в коротком импульсе излучения и имеющие квантовую эффективность детектирования одиночных фотонов ~60% на длине волны lambda=1.55 мкм. Проведенная модернизация технологии изготовления детекторов, позволила получить приемные устройства с мультифотонной квантовой эффективностью, приближающейся к расчетным значениям.
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Shurakov, A., Mikhalev, P., Mikhailov, D., Mityashkin, V., Tretyakov, I., Kardakova, A., et al. (2018). Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer. Microelectronic Engineering, 195, 26–31.
Abstract: In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
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An, P., Kovalyuk, V., Golikov, A., Zubkova, E., Ferrari, S., Korneev, A., et al. (2018). Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing. In J. Phys.: Conf. Ser. (Vol. 1124, 051047).
Abstract: In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q = 5×105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q3
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