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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
Title |
Energy spectrum of acceptors in germanium and its response to a magnetic field |
Type |
Journal Article |
Year |
1977 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
45 |
Issue |
4 |
Pages |
769-776 |
Keywords |
p-Ge, photoconductivity, energy spectrum, magnetic field |
Abstract |
We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression. |
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1727 |
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Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Title |
Carrier lifetime in excited states of shallow impurities in germanium |
Type |
Journal Article |
Year |
1977 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
25 |
Issue |
12 |
Pages |
539-543 |
Keywords |
Ge, shallow impurities, excited states |
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1726 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
Type |
Journal Article |
Year |
1976 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
43 |
Issue |
1 |
Pages |
116-122 |
Keywords |
Ge, free excitons |
Abstract |
Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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1731 |
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Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
Type |
Journal Article |
Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume |
10 |
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Pages |
1379-1383 |
Keywords |
Ge, cyclotron resonance, charged impurities, |
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1772 |
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Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
Type |
Journal Article |
Year |
1976 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
24 |
Issue |
3 |
Pages |
125-128 |
Keywords |
n-Ge, cyclotron-impurity resonance |
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1730 |
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Author |
Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
Type |
Journal Article |
Year |
1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
40 |
Issue |
2 |
Pages |
311-315 |
Keywords |
Ge, cyclotron resonance |
Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
Type |
Journal Article |
Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
22 |
Issue |
4 |
Pages |
95-97 |
Keywords |
Ge, impurities, excited states, absorption spectra |
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1773 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Title |
Investigation of excited donor states in GaAs |
Type |
Journal Article |
Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
Keywords |
GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Title |
Submillimeter spectroscopy of semiconductors |
Type |
Journal Article |
Year |
1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
37 |
Issue |
2 |
Pages |
299-304 |
Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
Abstract |
The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
18 |
Issue |
3 |
Pages |
93 |
Keywords |
Ge, free excitons, energy spectrum |
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1734 |
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Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
Type |
Journal Article |
Year |
1972 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume |
6 |
Issue |
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Pages |
362-363 |
Keywords |
Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
Type |
Journal Article |
Year |
1972 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
16 |
Issue |
4 |
Pages |
161-162 |
Keywords |
Ge, energy spectrum, free excitons |
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1736 |
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Gershenzon, E. M.; Goltsman, G. N. |
Title |
Zeeman effect in excited-states of donors in germanium |
Type |
Journal Article |
Year |
1972 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
Volume |
6 |
Issue |
3 |
Pages |
509 |
Keywords |
Ge, donors, Zeeman effect |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1737 |
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Goltsman, G. |
Title |
Simple method for stabilizing power of submillimetric spectrometer |
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Journal Article |
Year |
1972 |
Publication |
Pribory i Tekhnika Eksperimenta |
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Pribory i Tekhnika Eksperimenta |
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1 |
Pages |
136 |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia |
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1738 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
Title |
Transitions of electrons between excited states of donors in germanium |
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Journal Article |
Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
14 |
Issue |
2 |
Pages |
63-65 |
Keywords |
Ge, donors, excited states |
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1740 |
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