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Gershenson, M. E., Gong, D., Sato, T., Karasik, B. S., & Sergeev, A. V. (2001). Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures. Appl. Phys. Lett., 79, 2049–2051.
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Men’shchikov, E. M., Gogidze, I. G., Sergeev, A. V., Elant’ev, A. I., Kuminov, P. B., Gol’tsman, G. N., et al. (1997). Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride. Tech. Phys. Lett., 23(6), 486–488.
Abstract: A new type of fast detector is proposed, whose operation is based on the variation of the kinetic inductance of a superconducting film caused by nonequilibrium quasiparticles created by the electromagnetic radiation. The speed of the detector is determined by the rate of multiplication of photo-excited quasiparticles, and is nearly independent of the temperature, being less than 1 ps for NbN. Models based on the Owen-Scalapino scheme give a good description of the experimentally determined dependence of the power-voltage sensitivity of the detector on the modulation frequency. The lifetime of the quasiparticles is determined, and it is shown that the reabsorption of nonequilibrium phonons by the condensate has a substantial effect even in ultrathin NbN films 5 nm thick, and results in the maximum possible quantum yield. A low concentration of equilibrium quasiparticles and a high quantum yield result in a detectivity D*=1012 W−1·Hz1/2 at a temperature T=4.2 K and D*=1016 W−1·cm· Hz1/2 at T=1.6 K.
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Semenov, A. D., Heusinger, M. A., Renk, K. F., Menschikov, E., Sergeev, A. V., Elant'ev, A. I., et al. (1997). Influence of phonon trapping on the performance of NbN kinetic inductance detectors. IEEE Trans. Appl. Supercond., 7(2), 3083–3086.
Abstract: Voltage and microwave photoresponse of NbN thin films to modulated and pulsed optical radiation reveals, far below the superconducting transition, a response time consistent with the lifetime of nonequilibrium quasiparticles. We show that even in 5 nm thick films at 4.2 K the phonon trapping is significant resulting in a quasiparticle lifetime of a few nanoseconds that is an order of magnitude larger than the recombination time. Values and temperature dependence of the quasiparticle lifetime obey the Bardeen-Cooper-Schrieffer theory and are in quantitative agreement with the electron-phonon relaxation rate determined from the resistive response near the superconducting transition. We discuss a positive effect of the phonon trapping on the performance of kinetic inductance detectors.
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Ptitsina, N. G., Chulkova, G. M., Il’in, K. S., Sergeev, A. V., Pochinkov, F. S., Gershenzon, E. M., et al. (1997). Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate. Phys. Rev. B, 56(16), 10089–10096.
Abstract: The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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Il'in, K. S., Karasik, B. S., Ptitsina, N. G., Sergeev, A. V., Gol'tsman, G. N., Gershenzon, E. M., et al. (1996). Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity. In Czech. J. Phys. (Vol. 46, pp. 857–858).
Abstract: Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
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Chulcova, G. M., Ptitsina, N. G., Gershenzon, E. M., Gershenzon, M. E., & Sergeev, A. V. (1996). Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films. In Czech J. Phys. (Vol. 46, pp. 2489–2490).
Abstract: The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
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Sergeev, A. V., Semenov, A. D., Kouminov, P., Trifonov, V., Goghidze, I. G., Karasik, B. S., et al. (1994). Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation. Phys. Rev. B Condens. Matter., 49(13), 9091–9096.
Abstract: The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.
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Gousev, Y. P., Semenov, A. D., Gol'tsman, G. N., Sergeev, A. V., & Gershenzon, E. M. (1994). Electron-phonon interaction in disordered NbN films. Phys. B Condens. Mat., 194-196, 1355–1356.
Abstract: Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
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Semenov, A. D., Goghidze, I. G., Gol’tsman, G. N., Sergeev, A. V., & Gershenzon, E. M. (1993). Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films. Appl. Phys. Lett., 63(5), 681–683.
Abstract: The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons.
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Semenov, A. D., Goghidze, I. G., Gol’tsman, G. N., Sergeev, A. V., Aksaev, E. E., & Gershenzon, E. M. (1993). Non-equilibrium quasiparticle response to radiation and bolometric effect in YBaCuO films. IEEE Trans. Appl. Supercond., 3(1), 2132–2135.
Abstract: The voltage photoresponse of structured current biased YBCO films on different substrates to 20-ps laser pulses of 0.63- mu m and 1.54- mu m wavelengths and to continuously modulated radiation of 2-mm wavelength is measured to temperatures around Tc. Fast picosecond decay of the response to pulsed radiation is followed by slow exponential relaxation with a nanosecond characteristic time depending on the substrate material and film dimensions. The slow component does not depend on wavelength and is attributed to the bolometric effect, while the magnitude of the fast component associated with nonequilibrium response rises with wavelength. More than an order-of-magnitude increase of the nonequilibrium response is seen from near-infrared to millimeter-wave range. This dependence plausibly reflects the low efficiency of multiplication of photoexcited electrons in YBaCuO compared to conventional superconductors.
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