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Author Title Year (down) Publication DOI
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer 2018 Microelectronic Engineering 10.1016/j.mee.2018.03.008
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency 2017 Proc. 28th Int. Symp. Space Terahertz Technol.
Korneev, A.; Semenov, A.; Vodolazov, D.; Gol’tsman, G. N.; Sobolewski, R. Physics and operation of superconducting single-photon devices 2017 Superconductors at the Nanoscale 10.1515/9783110456806-010
Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers 2017 IEEE Trans. Terahertz Sci. Technol. 10.1109/Tthz.2016.2630845
Zhang, J.; Verevkin, A.; Slysz, W.; Chulkova, G.; Korneev, A.; Lipatov, A.; Okunev, O.; Gol’tsman, G. N.; Sobolewski, Roman Time-resolved characterization of NbN superconducting single-photon optical detectors 2017 Proc. SPIE 10.1117/12.2283811