Records |
Author |
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
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Journal Article |
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1976 |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume |
10 |
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Pages |
1379-1383 |
Keywords |
Ge, cyclotron resonance, charged impurities, |
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1772 |
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Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
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1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
40 |
Issue |
2 |
Pages |
311-315 |
Keywords |
Ge, cyclotron resonance |
Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
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1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
22 |
Issue |
4 |
Pages |
95-97 |
Keywords |
Ge, impurities, excited states, absorption spectra |
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1773 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Title |
Investigation of excited donor states in GaAs |
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Journal Article |
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1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
Keywords |
GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
Title |
Energy spectrum of free excitons in germanium |
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1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
18 |
Issue |
3 |
Pages |
93 |
Keywords |
Ge, free excitons, energy spectrum |
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1734 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Title |
Submillimeter spectroscopy of semiconductors |
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1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
37 |
Issue |
2 |
Pages |
299-304 |
Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
Abstract |
The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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Gershenzon, E. M.; Goltsman, G. N. |
Title |
Zeeman effect in excited-states of donors in germanium |
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1972 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
Volume |
6 |
Issue |
3 |
Pages |
509 |
Keywords |
Ge, donors, Zeeman effect |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1737 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
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Journal Article |
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1972 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
16 |
Issue |
4 |
Pages |
161-162 |
Keywords |
Ge, energy spectrum, free excitons |
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1736 |
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Author |
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1972 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume |
6 |
Issue |
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Pages |
362-363 |
Keywords |
Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
14 |
Issue |
5 |
Pages |
185-186 |
Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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