Records |
Author |
Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Mueller, E. R.; Waldman, J.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenco, S. I.; Svechnikov, S. I.; Yagoubov, P. A.; Gershenzon, E. M. |
Title |
Optimization of hot eleciron bolometer mixing efficiency in NbN at 119 micrometer wavelength |
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Conference Article |
Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Pages |
584-600 |
Keywords |
NbN HEB mixers |
Abstract |
We describe an investigation of a NbN HEB mixer for 2.5 THz. An intrinsic conversion loss of 23 dB has been measured with a two-laser measurement technique. The conversion loss was limited by the LO power available and is expected to decrease to 10 dB or less when sufficient LO power is available. For this initial experiment we used a prototype device which is directly coupled to the laser beams. We present results for a back-short technique that improves the optical coupling to the device and describe our progress for an antenna-coupled device with a smaller dimension. Based on our measured data for conversion loss and device output noise level, we predict that NbN HEB mixers will be capable of achieving DSB receiver noise temperatures of ten times the quantum noise limit in the THz range. |
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1616 |
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Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S. |
Title |
Hot electron quasioptical NbN superconducting mixer |
Type |
Journal Article |
Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
5 |
Issue |
2 |
Pages |
2232-2235 |
Keywords |
NbN HEB mixers |
Abstract |
Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform. |
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1051-8223 |
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1622 |
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Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Gol'tsman, G.; Gershenzon, E.; Voronov, B. |
Title |
NbN hot-electron mixer measurements at 200 GHz |
Type |
Conference Article |
Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1995 |
Publication |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
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Pages |
254-261 |
Keywords |
NbN HEB mixers |
Abstract |
We present noise and gain measurements of resistively driven NbN hot-electron mixers near 200 GHz. The device geometry is chosen so that the dominant cooling process of the hot-electrons is their interaction with the lattice. Except for a single batch, the intermediate frequency cut-off of these mixer elements is – 3 700 MHz, and has shown little variation among other batches of devices. At 100 MHz we measured intrinsic mixer losses as low as —3 dB. We measured the noise temperatures at several intermediate frequencies, and for the best de- vice at 137 MHz with 20 MHz bandwidth, we measured 2000 K; using a low-noise first- stage amplifier at 1.5 GHz with 200 MHz bandwidth, the receiver noise temperature measured 2800 K. We estimate that the noise contribution from the mixer is 500 K and the total losses are —15 dB at 137 MHz. |
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1626 |
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Gerecht, E.; Musante, C. F.; Schuch, R.; Lutz, C. R.; Jr.; Yngvesson, K. S.; Mueller, E. R.; Waldivian, J.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
Title |
Hot electron detection and mixing experiments in NbN at 119 micrometer wavelength |
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Conference Article |
Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
1995 |
Publication |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
284-293 |
Keywords |
NbN HEB mixers, detectors |
Abstract |
We have performed preliminary experiments with the goal of demonstrating a Hot Electron Bolometric (HEB) mixer for a 119 micrometer wavelength (2.5 THz). We have chosen a NbN device of size 700 x 350 micrometers. This device can easily be coupled to a laser LO source, which is advantageous for performing a prototype experiment. The relatively large size of the device means that the LO power required is in the mW range; this power can be easily obtained from a THz laser source. We have measured the amount of laser power actually absorbed in the device, and from this have estimated the best optical coupling loss to be about 10 di . We are developing methods for improving the optical coupling further. Preliminary measurements of the response of the device to a chopped black-body have not yet resulted in a measured receiver noise temperature. We expect to be able to complete this measurement in the near future. |
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1629 |
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Dzardanov, A.; Ekstrom, H.; Gershenzon, E.; Gol'tsman, G.; Jacobsson, S.; Karasik, B.; Kollberg, E.; Okunev, O.; Voronov, B.; Yngvesson, S. |
Title |
Hot-electron superconducting mixers for 20-500 GHz operation |
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Conference Article |
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1994 |
Publication |
Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. |
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2250 |
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4D |
Pages |
276-278 |
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Abstract |
Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies. |
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RPLAB @ phisix @ |
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981 |
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Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. |
Title |
Superconductive properties of ultrathin NbN films on different substrates |
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Journal Article |
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1994 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Volume |
7 |
Issue |
6 |
Pages |
1097-1102 |
Keywords |
NbN films |
Abstract |
A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz. |
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0131-5366 |
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Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках |
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1631 |
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Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Zorin, M. A.; Sejdman, L. A.; Semenov, A. D. |
Title |
Picosecond range detector base on superconducting niobium nitride film sensitive to radiation in spectral range from millimeter waves up to visible light |
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Journal Article |
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1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Volume |
5 |
Issue |
5 |
Pages |
955-960 |
Keywords |
NbN HEB detectors |
Abstract |
Fast-operating picosecond detector of electromagnetical radiation is developed on the basis of fine superconducting film of niobium nitride with high sensitivity within spectral range from millimetric waves up to visible light. Detector sensitive element represents structure covering narrow parallel strips with micron sizes included in the rupture of microstrip line. Detecting ability of the detector and time constant measured using amplitude-simulated radiation of reverse wave tubes and pulse radiation of picosecond gas and solid-body lasers, constitute D*≅1010 W-1·cm·Hz-1/2 and τ≤5 ps respectively, at 10 K temperature. The expected value of time constant of the detector at 10 K obtained via extrapolation of directly measured dependence that is, τ ∝ τ-1, constitutes 20 ps. Experimental data demonstrate that detection mechanism is linked with electron heating effect. |
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0131-5366 |
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1670 |
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Author |
Budyanskij, M. Ya.; Sejdman, L. A.; Voronov, B. M.; Gubkina, T. O. |
Title |
Increase of reproducibility in production of superconducting thin films of niobium nitride |
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Journal Article |
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1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Volume |
5 |
Issue |
10 |
Pages |
1950-1954 |
Keywords |
NbN films |
Abstract |
Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value. |
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0131-5366 |
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1675 |
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