|
Records |
Links |
|
Author |
Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol’tsman, G.; Gershenzon, E. |
|
|
Title |
Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies |
Type |
Conference Article |
|
Year |
1998 |
Publication |
Proc. 6-th Int. Conf. Terahertz Electron. |
Abbreviated Journal |
Proc. 6-th Int. Conf. Terahertz Electron. |
|
|
Volume |
|
Issue |
|
Pages |
149-152 |
|
|
Keywords |
NbN HEB mixers |
|
|
Abstract |
The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) |
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1582 |
|
Permanent link to this record |
|
|
|
|
Author |
Kroug, M.; Yagoubov, P.; Gol'tsman, G.; Kollberg, E. |
|
|
Title |
NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies |
Type |
Conference Article |
|
Year |
1997 |
Publication |
Inst. Phys. Conf. Ser. |
Abbreviated Journal |
Inst. Phys. Conf. Ser. |
|
|
Volume |
1 |
Issue |
|
Pages |
405-408 |
|
|
Keywords |
NbN HEB mixers |
|
|
Abstract |
|
|
|
Address |
Veldhoven |
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Bristol |
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0951-3248 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
3rd Eur. Conf. on Applied Superconductivity |
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1600 |
|
Permanent link to this record |
|
|
|
|
Author |
Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E. |
|
|
Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates |
Type |
Conference Article |
|
Year |
1997 |
Publication |
Proc. 8th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 8th Int. Symp. Space Terahertz Technol. |
|
|
Volume |
|
Issue |
|
Pages |
245-257 |
|
|
Keywords |
NbN HEB mixers, fabrication process |
|
|
Abstract |
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
276 |
|
Permanent link to this record |
|
|
|
|
Author |
Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. |
|
|
Title |
Gain and noise bandwidth of NbN hot-electron bolometric mixers |
Type |
Journal Article |
|
Year |
1997 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
|
|
Volume |
70 |
Issue |
24 |
Pages |
3296-3298 |
|
|
Keywords |
NbN HEB mixers, conversion loss, conversion gain, U-factor technique |
|
|
Abstract |
We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
279 |
|
Permanent link to this record |
|
|
|
|
Author |
Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. |
|
|
Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers |
Type |
Conference Article |
|
Year |
1997 |
Publication |
Proc. 27th Eur. Microwave Conf. |
Abbreviated Journal |
|
|
|
Volume |
2 |
Issue |
|
Pages |
972-977 |
|
|
Keywords |
HEB mixer, fabrication process |
|
|
Abstract |
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
|
|
Address |
Jerusalem, Israel |
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
IEEE |
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
27th Eur. Microwave Conf. |
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1075 |
|
Permanent link to this record |