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Author Title Year (down) Publication DOI
Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state 1990 Sov. Supercond.
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. Electron-phonon interaction in ultrathin Nb films 1990 Sov. Phys. JETP
Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation 1990 Solid State Communications 10.1016/0038-1098(90)90656-V
Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsyna, N. G.; Chulkova, G. M. AC losses and submillimeter absorption in single crystals La2CuO4 1990 Phys. B Condens. Mat. 10.1016/S0921-4526(09)80220-2
Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction 1990 Solid State Communications 10.1016/0038-1098(90)90215-W
Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. Low energy excitation in La2CuO4 1990 Sverkhprovodimost': Fizika, Khimiya, Tekhnika
Gershenzon, E. M.; Gol’tsman, G. N.; Sergeev, A.; Semenov, A. D. Picosecond response of YBaCuO films to electromagnetic radiation 1990 Proc. European Conf. High-Tc Thin Films and Single Crystals https://doi.org/10.1142/9789814540834
Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. Limiting characteristic of fast superconducting bolometers 1989 Sov. Phys.-Tech. Phys.
Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures 1989 JETP Lett.
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure 1989 Sov. Phys. and Technics of Semiconductors