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Baselmans JJA, Baryshev A, Hajenius M, Gao JR, Klapwijk TM, Voronov B, et al. Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers [abstract]. In: Proc. 17th Int. Symp. Space Terahertz Technol.; 2006. 81.
Abstract: We present a detailed experimental study of the direct detection effect in a small volume (0.15pm x lpm) NbN hot electron bolometer mixer. It is a quasioptical mixer with a twin slot antenna designed for 700 GHz and the measurement was done at a LO frequency of 670 GHz. The direct detection effect is characterized by a change in the mixer bias current when switching broadband radiation from a 300 K hot load to a 77 K cold load in a standard Y factor measurement. The result is, depending on the receiver under study, an increase or decrease in the receiver noise temperature. We find that the small signal noise temperature, which is the noise temperature that would be observed without the presence of the direct detection effect, and thus the one that is relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 K and 77 K calibration loads. Thus, in our case the direct detection effect reduces the mixer sensitivity. These results are in good agreement with previous measurement at THz frequencies [1]. Other experiments report an increase in mixer sensitivity [2]. To analyze this discrepancy we have designed a separate set of experiments to find out the physical origin of the direct detection effect. Possible candidates are the bias current dependence of the mixer gain and the bias current dependence of the IF match. We measured directly the change in mixer IF match and receiver gain due to the direct detection effect. From these measurements we conclude that the direct detection effect is caused by a combination of bias current reduction when switching form the 77 K to the 300 K load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. We also find that an increase in receiver sensitivity due to the direct detection effect is only possible if the noise temperature change due to the direct detection is dominated by the mixer-amplifier IF match. [1] J.J.A. Baselmans, A. Baryshev, S.F. Reker, M. Hajenius, J.R. Gao, T.M. Klapwijk, Yu.Vachtomin, S. Maslennikov, S. Antipov, B. Voronov, and G. Gol'tsman., Appl. Phys. Lett. 86, 163503 (2005). [2] S. Svechnokov, A. Verevkin, B. Voronov, E. Menschikov. E. Gershenzon, G. Gol'tsman, 9th Int. Symp. On Space THz. Techn., 45, (1999).
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Tarkhov M, Morozov D, Mauskopf P, Seleznev V, Korneev A, Kaurova N, et al. Single photon counting detector for THz radioastronomy. In: Proc. 17th Int. Symp. Space Terahertz Technol.; 2006. p. 119–22.
Abstract: In this paper we present the results of the research on the superconducting NbN-ultrathin-film single- photon detectors (SSPD) which are capable to detect single quanta in middle IR range. The detection mechanism is based on the hotspot formation in quasi-two-dimensional superconducting structures upon photon absorption. Spectral measurements showed that up to 5.7 gm wavelength (52 THz) the SSPD exhibits single-photon sensitivity. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of -4% at 60 THz. Although further decrease of the operation temperature far below 1 K does not lead to any significant increase of quantum efficiency. We expect that the improvement of the SSPD's performance at reduced operation temperature will make SSPD a practical detector with high characteristics for much lower THz frequencies as well.
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Gao JR, Hajenius M, Tichelaar FD, Voronov B, Grishina E, Klapwijk TM, et al. Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? In: Proc. 17th Int. Symp. Space Terahertz Technol.; 2006. p. 187–9.
Abstract: We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
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Svechnikov SI, Finkel MI, Maslennikov SN, Vachtomin YB, Smirnov KV, Seleznev VA, et al. Superconducting hot electron bolometer mixer for middle IR range. In: Proc. 16th Int. Crimean Microwave and Telecommunication Technology. Vol 2.; 2006. p. 686–7.
Abstract: The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator.
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Vachtomin YB, Antipov SV, Maslennikov SN, Smirnov KV, Polyakov SL, Zhang W, et al. Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region. In: Proc. 16th Int. Crimean Microwave and Telecommunication Technology. Vol 2.; 2006. p. 688–9.
Abstract: Presented in this paper are the performances of HEB mixers based on 2-3.5 nm thick NbN films integrated with log-periodic spiral antenna. Double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. Mixer gain bandwidth is 5.2 GHz. Local oscillator power is 1-3 muW for mixers with different active area
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Smirnov K, Korneev A, Minaeva O, Divochij A, Rubtsova I, Antipov A, et al. Superconducting single-photon detector for near- and middle IR wavelength range. In: Proc. 16th Int. Crimean Microwave and Telecommunication Technology. Vol 2.; 2006. p. 684–5.
Abstract: Presented in this paper are the results of research of NbN-film superconducting single-photon detector. At 2 K temperature, quantum efficiency in the visible light (0.56 mum) reaches 30-40 %. With the wavelength increase quantum efficiency decreases and comes to 20% at 1.55 mum and 0.02% at 5.6 mum. Minimum dark counts rate is 2times10-4s-1. The jitter of detector is 35 ps. The detector was successfully implemented for integrated circuits non-invasive optical testing. It is also perspective for quantum cryptography systems
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Irwin KD. Thermodynamics of nonlinear bolometers near equilibrium. In: Proc. 11th International Workshop on Low Temp. Detectors. Vol 559.; 2006. p. 718–20.
Abstract: We present the first thermodynamically correct calculation of the noise in a simple nonlinear resistive bolometer or calorimeter operated out of equilibrium. The solution is rigorous only for first- and second-order deviations from equilibrium, and for the linear and quadratic terms of dissipative elements. In contrast, existing models of noise in resistive bolometers are based on the application of equilibrium theories to a system that is often nonlinear and out of equilibrium. We derive solutions applicable both in and out of steady state. The noise has power spectral density different from the equilibrium theory, and it has higher-order correlations and non-Gaussian characteristics. The results do not apply to non-Markovian hidden variables in the bolometer.
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Rosfjord KM, Yang JKW, Dauler EA, Kerman AJ, Vikas Anant, Voronov BM, et al. Nanowire Single-photon detector with an integrated optical cavity and anti-reflection coating. Opt Express. 2006;14(2):527–34.
Abstract: We have fabricated and tested superconducting single-photon detectors and demonstrated detection efficiencies of 57% at 1550-nm wavelength and 67% at 1064 nm. In addition to the peak detection efficiency, a median detection efficiency of 47.7% was measured over 132 devices at 1550 nm. These measurements were made at 1.8K, with each device biased to 97.5% of its critical current. The high detection efficiencies resulted from the addition of an optical cavity and anti-reflection coating to a nanowire photodetector, creating an integrated nanoelectrophotonic device with enhanced performance relative to the original device. Here, the testing apparatus and the fabrication process are presented. The detection efficiency of devices before and after the addition of optical elements is also reported.
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Zhang Q, Goebel A, Wagenknecht C, Chen Y-A, Zhao B, Yang T, et al. Experimental quantum teleportation of a two-qubit composite system. Nat Phys. 2006;2(10):678–82.
Abstract: Quantum teleportation, a way to transfer the state of a quantum system from one location to another, is central to quantum communication and plays an important role in a number of quantum computation protocols. Previous experimental demonstrations have been implemented with single photonic or ionic qubits. However, teleportation of single qubits is insufficient for a large-scale realization of quantum communication and computation. Here, we present the experimental realization of quantum teleportation of a two-qubit composite system. In the experiment, we develop and exploit a six-photon interferometer to teleport an arbitrary polarization state of two photons. The observed teleportation fidelities for different initial states are all well beyond the state estimation limit of 0.40 for a two-qubit system. Not only does our six-photon interferometer provide an important step towards teleportation of a complex system, it will also enable future experimental investigations on a number of fundamental quantum communication and computation protocols
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Brown ER, Lee AWM, Navi BS, Bjarnason JE. Characterization of a planar self-complementary square-spiral antenna in the THz region. Microwave Opt Technol Lett. 2006;48(3):524–9.
Abstract: This paper describes a compact, self-complementary square-spiral antenna on a GaAs substrate with a broadside high-directivity (~9 dB) frequency-independent pattern when coupled through a silicon hyperhemisphere. The driving-point resistance undulates between ~00 and 300Ω from 200 GHz to 1 THz—much higher than the 72Ω value from Booker's modified formula, but quite beneficial for coupling to high-impedance broadband devices
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