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Gershenzon EM, Gol'tsman G, Ptitsina NG. Energy spectrum of free excitons in germanium. JETP Lett. 1973;18(3):93.
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Gershenzon EM, Gol'tsman GN, Mel'nikov AP. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett. 1971;14(5):185–6.
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Gershenzon EM, Gol'tsman GN. Transitions of electrons between excited states of donors in germanium. JETP Lett. 1971;14(2):63–5.
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Gershenzon EM, Gol'tsman GN, Emtsev VV, Mashovets TV, Ptitsyna NG, Ryvkin SM. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett. 1971;14(6):241.
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Mel’nikov AP, Gurvich YA, Shestakov LN, Gershenzon EM. Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon. Jetp Lett. 2001;73(1):44–7.
Abstract: The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
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Gershenzon EM, Orlov LA, Ptitsina NG. Absorption spectra in electron transitions between excited states of impurities in germanium. JETP Lett. 1975;22(4):95–7.
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Ptitsina NG, Chulkova GM, Gershenzon EM. Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films. JETP. 1995;80(5):960–4.
Abstract: The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.
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