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Swetz DS, Bennett DA, Irwin KD, Schmidt DR, Ullom JN. Current distribution and transition width in superconducting transition-edge sensors. Appl Phys Lett. 2012;101:242603.
Abstract: Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition.
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Ferrari S, Kahl O, Kovalyuk V, Goltsman GN, Korneev A, Pernice WHP. Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires. Appl Phys Lett. 2015;106(15):151101 (1 to 5).
Abstract: We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents.
W. H. P. Pernice acknowledges support by the DFG Grant Nos. PE 1832/1-1 and PE 1832/1-2 and the Helmholtz society through Grant No. HIRG-0005. The Ph.D. education of O. Kahl is embedded in the Karlsruhe School of Optics and Photonics (KSOP). G. N. Goltsman acknowledges support by Russian Federation President Grant HШ-1918.2014.2 and Ministry of Education and Science of the Russian Federation Contract No.: RFMEFI58614X0007. A. Korneev acknowledges support by Statement Task No. 3.1846.2014/k. V. Kovalyuk acknowledges support by Statement Task No. 2327. We also acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-Württemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A6.4. We thank S. Kühn and S. Diewald for the help with device fabrication as well as B. Voronov and A. Shishkin for help with NbN thin film deposition and A. Semenov for helpful discussion about the detection mechanism of nanowire SSPD's.
The authors declare no competing financial interests.
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Kardakova A, Finkel M, Morozov D, Kovalyuk V, An P, Dunscombe C, et al. The electron-phonon relaxation time in thin superconducting titanium nitride films. Appl Phys Lett. 2013;103(25):252602 (1 to 4).
Abstract: We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.
The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.
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Floet D. W., Gao J. R., Klapwijk T. M., de Korte P. A. J. Bias Dependence of the Thermal Time Constant in Nb Superconducting Diffusion-Cooled HEB Mixers. Appl Phys Lett. 2000;77:1719.
Abstract: We present an experimental study of the intermediate frequency bandwidth of a Nb diffusion-cooled hot-electron bolometer mixer for different bias voltages. The measurements show that the bandwidth increases with increasing voltage. Analysis of the data reveals that this effect is mainly caused by a decrease of the intrinsic thermal time of the mixer and that the effect of electrothermal feedback through the intermediate frequency circuit is small. The results are understood using a qualitative model, which takes into account the different effective diffusion constants in the normal and superconducting domains.
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Elvira D, Michon A, Fain B, Patriarche G, Beaudoin G, Robert-Philip I, et al. Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm. Appl Phys Lett. 2010;97(13):131907 (1 to 3).
Abstract: By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.
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Fedorov G, Kardakova A, Gayduchenko I, Charayev I, Voronov BM, Finkel M, et al. Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation. Appl Phys Lett. 2013;103(18):181121 (1 to 5).
Abstract: We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.
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Ferrari S, Kovalyuk V, Vetter A, Lee C, Rockstuhl C, Semenov A, et al. Analysis of the detection response of waveguide-integrated superconducting nanowire single-photon detectors at high count rate. Appl Phys Lett. 2019;115(10):101104.
Abstract: Nanophotonic circuitry and superconducting nanowires have been successfully combined for detecting single photons, propagating in an integrated photonic circuit, with high efficiency and low noise and timing uncertainty. Waveguide-integrated superconducting nanowire single-photon detectors (SNSPDs) can nowadays be engineered to achieve subnanosecond recovery times and can potentially be adopted for applications requiring Gcps count rates. However, particular attention shall be paid to such an extreme count rate regime since artifacts in the detector functionality emerge. In particular, a count-rate dependent detection efficiency has been encountered that can compromise the accuracy of quantum detector tomography experiments. Here, we investigate the response of waveguide-integrated SNSPDs at high photon flux and identify the presence of parasitic currents due to the accumulation of charge in the readout electronics to cause the above-mentioned artifact in the detection efficiency. Our approach allows us to determine the maximum photon count rate at which the detector can be operated without adverse effects. Our findings are particularly important to avoid artifacts when applying SNSPDs for quantum tomography.
We acknowledge support through ERC Consolidator Grant No. 724707 and from the Deutsche Forschungsgemeinschaft through Project No. PE 1832/5-1,2, as well as funding by the Volkswagen Foundation. This project has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement No. 675745. V.K. and G.G. acknowledge support from the Russian Science Foundation Project No. 16-12-00045 (NbN film deposition and testing). A.V. acknowledges support from the Karlsruhe School of Optics and Photonics (KSOP).
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Smirnov KV, Divochiy AV, Vakhtomin YB, Sidorova MV, Karpova UV, Morozov PV, et al. Rise time of voltage pulses in NbN superconducting single photon detectors. Appl Phys Lett. 2016;109(5):052601.
Abstract: We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector Rn, which appears after photon absorption, on its kinetic inductance Lk and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.
D.Yu.V. acknowledges the support from the Russian Foundation for Basic Research (Project No. 15-42-02365). K.V.S. acknowledges the financial support from the Ministry of Education and Science of the Russian Federation (Contract No. 3.2655.2014/K).
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Bandurin DA, Gayduchenko I, Cao Y, Moskotin M, Principi A, Grigorieva IV, et al. Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors. Appl Phys Lett. 2018;112(14):141101 (1 to 5).
Abstract: Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.
D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.
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Rasulova GK, Brunkov PN, Pentin IV, Egorov AY, Knyazev DA, Andrianov AV, et al. A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter. Appl Phys Lett. 2012;100(13):131104 (1 to 4).
Abstract: The bolometer response to THz radiation from a weakly coupled GaAs/AlGaAs superlattice biased in the self-oscillations regime has been observed. The bolometer signal is modulated with the frequency equal to the fundamental frequency of superlattice self-oscillations. The frequency spectrum of the bolometer signal contains higher harmonics whose frequency is a multiple of fundamental frequency of self-oscillations.
This work was supported by State Contracts Nos. 16.740.11.0044 and 16.552.11.7002 of Ministry of Education and Science of the Russian Federation. Structural characterization was made on the equipment of the Joint Research Centre «Material science and characterization in advanced technology» (Ioffe Institute, St. Petersburg, Russia).
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