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Kasparek W, Fernandez A, Hollmann F, Wacker R. Measurements of ohmic losses of metallic reflectors at 140 GHz using a 3-mirror resonator technique. Int. J. Infrared and Millimeter Waves. 2001;22(11):1695–707.
Abstract: The reflectivity of metallic mirrors in the millimeter wave region does not only depend on the material, but also on the structure and roughness of the surface. We have performed measurements of the reflectivity of various plane and grooved metallic and graphite samples at 140 GHz. The technique is based on the comparison of the quality factor of a 2-mirror reference resonator with the quality factor of a 3-mirror resonator which has identical dimensions and includes the mirror to be tested. After a brief presentation of the theory, the set-up is described and the reflection loss for various aluminium and copper mirrors as well as vacuum compatible materials for applications in thermonuclear fusion experiments are presented and discussed.
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ГОСТ 2.102-68. ЕСКД. Виды и комплектность конструкторских документов.; 2001.
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ГОСТ 19.301-2000. ЕСКД. Программа и методика испытаний. Требования к содержанию, оформлению и контролю качества.; 2001.
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ГОСТ Р 15.201-2000. Продукция производственно-технического назначения. Порядок разработки и постановки продукции на производство.; 2001.
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Danny Wilms Floet. Hotspot mixing in THz niobium superconducting hot electron bolometer mixers [Ph.D. thesis]. Netherlands; 2001.
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Skalare A, McGrath WR, Echternach PM, Leduc HG, Siddiqi I, Verevkin A, et al. Aluminum hot-electron bolometer mixers at submillimeter wavelengths. IEEE Trans. Appl. Supercond.. 2001;11(1):641–4.
Abstract: Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 Ω down to about 9 Ω per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 μm long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies.
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