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Gol'tsman GN. Hot electron bolometric mixers: new terahertz technology. Infrared Physics & Technology. 1999;40(3):199–206.
Abstract: This paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixers has crossed the level of 1 K GHz−1 at 430 GHz (410 K), 600–650 GHz (480 K), 750 GHz (600 K), 810 GHz (780 K) and is close to that level at 1.1 THz (1250 K) and 2.5 THz (4500 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and about 100 nW for mixers made by e-beam lithography. A waveguide version of 800 GHz receiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, AZ, to conduct astronomical observations of known submillimeter lines (CO, J=7→6, CI, J=2→1). It was proved that the receiver works as a practical instrument.
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Morozov P, Lukina M, Shirmanova M, Divochiy A, Dudenkova V, Gol'tsman GN, et al. Singlet oxygen phosphorescence imaging by superconducting single-photon detector and time-correlated single-photon counting. Opt Lett. 2021;46(6):1217–20.
Abstract: This Letter presents, to the best of our knowledge, a novel optical configuration for direct time-resolved measurements of luminescence from singlet oxygen, both in solutions and from cultured cells on photodynamic therapy. The system is based on the superconducting single-photon detector, coupled to the confocal scanner that is modified for the near-infrared measurements. The recording of a phosphorescence signal from singlet oxygen at 1270 nm has been done using time-correlated single-photon counting. The performance of the system is verified by measuring phosphorescence from singlet oxygen generated by the photosensitizers commonly used in photodynamic therapy: methylene blue and chlorin e6. The described system can be easily upgraded to the configuration when both phosphorescence from singlet oxygen and fluorescence from the cells can be detected in the imaging mode. Thus, co-localization of the signal from singlet oxygen with the areas inside the cells can be done.
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Gershenzon EM, Gol'tsman GN, Gogidze IG, Semenov AD, Sergeev AV. Processes of electron-phonon interaction in thin YBaCuO films. Phys C: Supercond. 1991;185-189:1371–2.
Abstract: The ultrafast voltage response of YBaCuO films to laser radiation is studied and compared with previously investigated quasiparicles response to radiation of submillimeter wavelength range. Voltage shift under the visible light radiation has two components. Picosecond response realized as suppression superconductivity by nonequilibrium excess quasiparticles, response time is determined by quasiparticles recombination rate. Nanosecond response is probably due to bolometric effect.
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Gershenzon EM, Gol'tsman GN, Semenov AD, Sergeev AV. Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation. Solid State Communications. 1990;76(4):493–7.
Abstract: The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable.
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Gol'tsman GN, Goghidze IG, Kouminov PB, Karasik BS, Semenov AD, Gershenzon EM. Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses. J Supercond. 1994;7(4):751–5.
Abstract: The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.
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Arutyunov KY, Ramos-Alvarez A, Semenov AV, Korneeva YP, An PP, Korneev AA, et al. Superconductivity in highly disordered NbN nanowires. Nanotechnol. 2016;27(47):47lt02 (1 to 8).
Abstract: The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links.
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Aksaev EE, Gershenzon EM, Gol'tsman GN, Semenov AD, Sergeev AV. Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures. JETP Lett. 1989;50(5):283–6.
Abstract: The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs.
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Sergeev A, Semenov A, Trifonov V, Karasik B, Gol'tsman G, Gershenzon E. Heat transfer in YBaCuO thin film/sapphire substrate system. J Supercond. 1994;7(2):341–4.
Abstract: The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.
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Zorin M, Milostnaya I, Gol'tsman GN, Gershenzon EM. Fast NbN superconducting switch controlled by optical radiation. IEEE Trans Appl Supercond. 1997;7(2):3734–7.
Abstract: The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits.
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Karasik BS, Il'in KS, Ptitsina NG, Gol'tsman GN, Gershenzon EM, Pechen' EV, et al. Electron-phonon scattering rate in impure NbC films [abstract]. In: NASA/ADS.; 1998. Y35.08.
Abstract: The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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