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An P, Kovalyuk V, Golikov A, Zubkova E, Ferrari S, Korneev A, et al. Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051047.
Abstract: In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q = 5×105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q3
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Tarkhov M, Morozov D, Mauskopf P, Seleznev V, Korneev A, Kaurova N, et al. Single photon counting detector for THz radioastronomy. In: Proc. 17th Int. Symp. Space Terahertz Technol.; 2006. p. 119–22.
Abstract: In this paper we present the results of the research on the superconducting NbN-ultrathin-film single- photon detectors (SSPD) which are capable to detect single quanta in middle IR range. The detection mechanism is based on the hotspot formation in quasi-two-dimensional superconducting structures upon photon absorption. Spectral measurements showed that up to 5.7 gm wavelength (52 THz) the SSPD exhibits single-photon sensitivity. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of -4% at 60 THz. Although further decrease of the operation temperature far below 1 K does not lead to any significant increase of quantum efficiency. We expect that the improvement of the SSPD's performance at reduced operation temperature will make SSPD a practical detector with high characteristics for much lower THz frequencies as well.
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Ryabchun S, Korneev A, Matvienko V, Smirnov K, Kouminov P, Seleznev V, et al. Superconducting single photon detectors array based on hot electron phenomena. In: Proc. 15th Int. Symp. Space Terahertz Technol.; 2004. p. 242–7.
Abstract: In this paper we propose to use time domain multiplexing for large format arrays of superconducting single photon detectors (SSPDs) of the terahertz, visible and infrared frequency ranges based on ultrathin superconducting NbN films. Effective realization of time domain multiplexing for SSPD arrays is possible due to a short electric pulse of the SSPD as response to radiation quantum absorption, picosecond jitter and extremely low noise equivalent power (NEP). We present experimental results of testing 2×2 arrays in the infrared waveband. The measured noise equivalent power in the infrared and expected for the terahertz waveband is 10 – 21 WHz -1/2 . The best quantum efficiency (QE) of SSPD is 50% at 1.3 µm wavelength.
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Zhang J, Pearlman A, Slysz W, Verevkin A, Sobolewski R, Wilsher K, et al. A superconducting single-photon detector for CMOS IC probing. In: Proc. 16-th LEOS. Vol 2.; 2003. p. 602–3.
Abstract: In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA).
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Korneev A, Korneeva Y, Manova N, Larionov P, Divochiy A, Semenov A, et al. Recent nanowire superconducting single-photon detector optimization for practical applications. IEEE Trans Appl Supercond. 2013;23(3):2201204 (1 to 4).
Abstract: In this paper, we present our approaches to the development of fiber-coupled superconducting single photon detectors with enhanced photon absorption. For such devices we have measured detection efficiency in wavelength range from 500 to 2000 nm. The best fiber coupled devices exhibit detection efficiency of 44.5% at 1310 nm wavelength and 35.5% at 1550 nm at 10 dark counts per second.
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Prokhodtsov A, An P, Kovalyuk V, Zubkova E, Golikov A, Korneev A, et al. Optimization of on-chip photonic delay lines for telecom wavelengths. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051052.
Abstract: In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm.
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Polyakova MI, Korneev AA, Semenov AV. Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012146 (1 to 3).
Abstract: In this work, we present results of quantum detector tomography of superconducting single photon detector (SSPD) based on MoSi film, and compare them with previously reported data on NbN. We find that for both materials hot spot interaction length coincides with the strip width, and the dependence of single and double-spot detection efficiencies on bias current are compatible with sufficiently large hot-spot size, approaching the strip width.
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Baeva E, Sidorova M, Korneev A, Goltsman G. Precise measurement of the thermal conductivity of superconductor. In: Proc. AIP Conf. Vol 1936.; 2018. 020003 (1 to 4).
Abstract: Measuring the thermal properties such as the heat capacity provide information about intrinsic mechanisms operated inside. In general, the ratio between electron and phonon specific heat Ce/Cp shows how the absorbed energy shared between electron and phonon subsystems. In this work we make estimations for amplitude-modulated absorption of THz radiation technique for investigation of the ratio Ce/Cp in superconducting Niobium Nitride (NbN) at T = Tc. Our results indicates that experimentally the frequency of modulation has to be extra large to extract the quantity. We perform a new technique allowed to work at low frequency with accurately measurement of absorbed power.
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Goltsman G, Korneev A, Izbenko V, Smirnov K, Kouminov P, Voronov B, et al. Nano-structured superconducting single-photon detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2004;520(1-3):527–9.
Abstract: NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
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Zhang J, Verevkin A, Slysz W, Chulkova G, Korneev A, Lipatov A, et al. Time-resolved characterization of NbN superconducting single-photon optical detectors. In: Armitage JC, editor. Proc. SPIE. Vol 10313. SPIE; 2017. 103130F (1 to 3).
Abstract: NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest.
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