Abstract: Traditionally, photon detectors are operated in a direct detection mode counting incident photonswith a known quantum efficiency. This procedure allows one to detect weak sources of radiation but allthe information about its frequency is limited by the optical filtering/resonating structures used which arenot as precise as would be required for some practical applications. In this work we propose heterodynereceiver based on a photon counting mixer which would combine excellent sensitivity of a photon countingdetector and excellent spectral resolution given by the heterodyne technique. At present, Superconducting-Nanowire-Single-Photon-Detectors (SNSPDs) [1] are widely used in a variety of applications providing thebest possible combination of the sensitivity and speed. SNSPDs demonstrate lack of drawbacks like highdark count rate or autopulsing, which are common for traditional semiconductor-based photon detectors,such as avalanche photon diodes.In our study we have investigated SNSPD operated as a photon counting mixer. To fully understandits behavior in such a regime, we have utilized experimental setup based on a couple of distributedfeedback lasers irradiating at 1.5 micrometers, one of which is being the Local Oscillator (LO) and theother mimics the test signal [2]. The SNSPD was operated in the current mode and the bias currentwas slightly below of the critical current. Advantageously, we have found that LO power needed for anoptimal mixing is of the order of hundreds of femtowatts to a few picowatts, which is promising for manypractical applications, such as receiver matrices [3]. With use of the two lasers, one can observe thevoltage pulses produced by the detected photons, and the time distribution of the pulses reproduces thefrequency difference between the lasers, forming power response at the intermediate frequency which canbe captured by either an oscilloscope (an analysis of the pulse statistics is needed) or by an RF spectrumanalyzer. Photon-counting nature of the detector ensures quantum-limited sensitivity with respect to theoptical coupling achieved. In addition to the chip SNSPD with normal incidence coupling, we use thedetectors with a travelling wave geometry design [4]. In this case a NbN nanowire is placed on the topof a Si3N4 nanophotonic waveguide, thus increasing the efficient interaction length. For this reason it ispossible to achieve almost complete absorption of photons and reduce the detector footprint. This reducesthe noise of the device together with the expansion of the bandwidth. Integrated device scheme allowsus to measure the optical losses with high accuracy. Our approach is fully scalable and, along with alarge number of devices integrated on a single chip can be adapted to the mid and far IR ranges wherephoton-counting measurement may be beneficial as well [5].Acknowledgements: This work was supported in part by the Ministry of Education and Science of theRussian Federation, contract No. 14.B25.31.0007 and by RFBR grant No. 16-32-00465.

Abstract: This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented.

Abstract: There is an urgent need in radio astronomy for low noise heterodyne receivers for frequencies above about 500 GHz. It is not certain that mixers based on superconducting quasiparticle tunnelling (SIS mixers) may turn out to be the answer to this need. In order to try to find an alternative way for realizing low noise heterodyne receivers for submillimeter waves, so called hot electron bolometric effects for mixing are now being investigated. Two basically different approaches are tried, one based on semiconductors and one on superconductors. Both methods are briefly discussed in this overview paper.

Abstract: The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015.

Abstract: The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented.