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Author
Shangina, E. L.
;
Smirnov, K. V.
;
Morozov, D. V.
;
Kovalyuk, V. V.
;
Gol’tsman, G. N.
;
Verevkin, A. A.
;
Toropov, A. I.
Title
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures
Type
Journal Article
Year
2010
Publication
Bull. Russ. Acad. Sci. Phys.
Abbreviated Journal
Bull. Russ. Acad. Sci. Phys.
Volume
74
Issue
1
Pages
100-102
Keywords
2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth
Abstract
The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
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1062-8738
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Conference
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no
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1217
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