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Elmanova A, An P, Kovalyuk V, Golikov A, Elmanov I, Goltsman G. Study of silicon nitride O-ring resonator for gas-sensing applications. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012124.
Abstract: In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.
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Florya IN, Korneeva YP, Sidorova MV, Golikov AD, Gaiduchenko IA, Fedorov GE, et al. Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs. In: EPJ Web of Conferences. Vol 103.; 2015. 10004 (1 to 2).
Abstract: We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model.
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Korneev A, Kovalyuk V, Ferrari S, Kahl O, Pernice W, An P, et al. Superconducting Single-Photon Detectors for Integrated Nanophotonics Circuits. In: 16th ISEC.; 2017. p. 1–3.
Abstract: We present an overview of our recent achievements in integration of superconducting nanowire single-photon detectors SNSPD with dielectric optical waveguides. We are able to produce complex nanophotonics integrated circuits containing optical elements and photon detector on single chip thus producing a compact integrated platform for quantum optics applications.
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Komrakova S, Kovalyuk V, An P, Golikov A, Rybin M, Obraztsova E, et al. Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012135.
Abstract: In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide.
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Prokhodtsov A, Kovalyuk V, An P, Golikov A, Shakhovoy R, Sharoglazova V, et al. Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012118.
Abstract: In this work, we experimentally studied silicon nitride Mach-Zehnder interferometer (MZI) with two directional couplers and 400 ps optical delay line for telecom wavelength 1550 nm. We achieved the extinction ratio in a range of 0.76-13.86 dB and system coupling losses of 28-44 dB, depending on the parameters of directional couplers. The developed interferometer is promising for the use in a compact random number generator for the needs of a fully integrated quantum cryptography system, where compact design, as well as high generation speed, are needed.
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Venediktov IO, Elezov MS, Prokhodtsov AI, Kovalyuk VV, An PP, Golikov AD, et al. Study of microheater’s phase modulation for on-chip Kennedy receiver. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012117.
Abstract: In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters.
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Zubkova E, Golikov A, An P, Kovalyuk V, Korneev A, Ferrari S, et al. CWDM demultiplexer using anti-reflection, contra-directional couplers based on silicon nitride rib waveguide. In: J. Phys.: Conf. Ser. Vol 1410.; 2019. 012179.
Abstract: We report on the development and fabrication of a 9-channel coarse wavelength-division multiplexing for telecommunication wavelengths (1550 nm) using anti-reflection contra-directional couplers, based on silicon nitride (Si3N4) rib waveguide. The transmitted and reflected spectrum in each channel of the demultiplexer were measured. The average full width at half maximum of the transmitted (reflected) spectra is about 3 nm.
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Kuzin A, Kovalyuk V, Golikov A, Prokhodtsov A, Marakhin A, Ferrari S, et al. Efficiency of focusing grating couplers versus taper length and angle. In: J. Phys.: Conf. Ser. Vol 1410.; 2019. 012181.
Abstract: Here we experimentally studied dependence of a focusing grating coupler efficiency versus taper length and angle on silicon nitride platform. As a result, we obtained a dependence for the efficiency of a focusing grating coupler on the parameters of the taper length and angle.
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Prokhodtsov A, Golikov A, An P, Kovalyuk V, Goltsman G, Arakelyan S, et al. Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency. In: EPJ Web Conf. Vol 220.; 2019. 02009.
Abstract: The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform.
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Elmanov I, Elmanova A, Komrakova S, Golikov A, Kaurova N, Kovalyuk V, et al. Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform. In: EPJ Web Conf. Vol 220.; 2019. 03012.
Abstract: In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
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