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Author |
Gol'tsman, G. N. |
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Title |
Hot electron bolometric mixers: new terahertz technology |
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Year |
1999 |
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Infrared Physics & Technology |
Abbreviated Journal |
Infrared Physics & Technology |
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40 |
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3 |
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199-206 |
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NbN HEB mixers |
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Abstract |
This paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixers has crossed the level of 1 K GHz−1 at 430 GHz (410 K), 600–650 GHz (480 K), 750 GHz (600 K), 810 GHz (780 K) and is close to that level at 1.1 THz (1250 K) and 2.5 THz (4500 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and about 100 nW for mixers made by e-beam lithography. A waveguide version of 800 GHz receiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, AZ, to conduct astronomical observations of known submillimeter lines (CO, J=7→6, CI, J=2→1). It was proved that the receiver works as a practical instrument. |
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1350-4495 |
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1570 |
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Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
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Noise temperature and sensitivity of a NbN hot-electron mixer at frequencies from 0.7 THz to 5.2 THz |
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Conference Article |
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Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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190-199 |
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NbN HEB mixers |
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We report on noise temperature measurements of a NbN phonon-cooled hot-electron bolometric mixer at different bias regimes. The device was a 3 nm thick bridge with in-plane dimensions of 1.7 x 0.2 gm 2 integrated in a complementary logarithmic spiral antenna. Measurements were performed at frequencies ranging from 0.7 THz up to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz) 5600 K (4.3 THz) and 8800 K (5.2 THz). Two bias regimes are possible in order to achieve low noise temperatures. But only one of them yields sensitivity fluctuations close to the theoretical limit. |
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1573 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Zhuang, Y.; Yngvesson, K. S.; Dickinson, J.; Goyette, T.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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Improved characteristics of NbN HEB mixers integrated with log-periodic antennas |
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Conference Article |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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200-207 |
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NbN HEB mixers |
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1574 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Schubert, J.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. |
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Title |
NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz |
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Conference Article |
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Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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238-246 |
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NbN HEB mixers |
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The performance of NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1- 0.2 gm, the width is 1-2 gm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power required is less than 500 nW at the receiver input. First results on the spiral antenna polarization measurements are reported. |
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1575 |
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Author |
Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman |
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Title |
Characterization of the electron energy relaxation process in NbN hot-electron devices |
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Conference Article |
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Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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390-397 |
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Keywords |
HEB mixers, SSPD, SNSPD, NbN films, Nb films |
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We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth. |
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1576 |
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Schubert, J.; Semenov, A.; Hübers, H.-W.; Gol'tsman, G.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
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Title |
Broad-band terahertz NbN hot-electron bolometric mixer |
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Conference Article |
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Year |
1999 |
Publication |
Inst. Phys. Conf. |
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Inst. Phys. Conf. |
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167 |
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663-666 |
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NbN HEB mixers |
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4th Europ. Conf. on Appl. Superconductivity, Barcelona, Spain, 14-17 September 1999 |
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1578 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol’tsman, G.; Gershenzon, E. |
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Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies |
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Conference Article |
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1998 |
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Proc. 6-th Int. Conf. Terahertz Electron. |
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Proc. 6-th Int. Conf. Terahertz Electron. |
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149-152 |
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NbN HEB mixers |
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The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB. |
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IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) |
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1582 |
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Schwaab, G.W.; Auen, K.; Bruendermann, E.; Feinaeugle, R.; Gol’tsman, G.N.; Huebers, H.-W.; Krabbe, A.; Roeser, H.-P.; Sirmain, G. |
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2- to 6-THz heterodyne receiver array for the Stratospheric Observatory for Infrared Astronomy (SOFIA) |
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Conference Article |
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1998 |
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Proc. SPIE |
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Proc. SPIE |
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3357 |
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85-96 |
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NbN HEB mixers, applications, stratospheric observatory, airborne |
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The Institute of Space Sensor Technology of the German Aerospace Center (DLR) is developing a heterodyne array receiver for the frequency range 2 to 6 THz for the Stratospheric Observatory for Infrared Astronomy (SOFIA). Key science issues in that frequency range are the observation of lines of atoms [e.g. (OI)], ions [e.g. (CII), (NII)], and molecules (e.g. OH, HD, CO) with high spectral resolution to study the dynamics and evolution of galactic and extragalactic objects. Long term goal is the development of an integrated array heterodyne receiver with superconducting hot electron bolometric (HEB) mixers and p-type Ge or Si lasers as local oscillators. The first generation receiver will be composed of HEB mixers in a 2 pixel 2 polarization array which will be pumped by a gas laser local oscillator. Improved Schottky diode mixers are the backup solution for the HEBs. The state of the art of HEB mixer and p-type Ge laser technology are described as well as possible improvements in the ’conventional’ optically pumped far-infrared laser and Schottky diode mixer technology. Finally, the frequency coverage of the first generation heterodyne receiver for some important astronomical transitions is discussed. The expected sensitivity is compared to line fluxes measured by the ISO satellite. |
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SPIE |
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Phillips, T.G. |
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Advanced Technology MMW, Radio, and Terahertz Telescopes |
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1583 |
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Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N. |
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Picosecond response of a superconducting hot-electron NbN photodetector |
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1998 |
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Appl. Supercond. |
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Appl. Supercond. |
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6 |
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7-9 |
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423-428 |
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NbN SSPD, SNSPD |
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The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W. |
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0964-1807 |
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Svechnikov, S.; Verevkin, A.; Voronov, B.; Menschikov, E.; Gershenzon, E.; Gol'tsman, G. |
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Quasioptical phonon-cooled NbN hot electron bolometer mixers at 0.5-1.1 THz |
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Conference Article |
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1998 |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
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45-51 |
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NbN HEB mixers |
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The noise performance of a receiver incorporating spiral antenna coupled NbN phonon-cooled superconducting hot electron bolometric mixer is measured from 450 GHz to 1200 GHz. The mixer element is thin (thickness nm) NbN 1.5 pm wide and 0.2 i.um long film fabricated by lift-off e-beam lithography on high-resistive silicon substrate. The noise of the receiver temperature is 1000 K at 800-900 GHz, 1200 K at 950 GHz, and 1600 K at 1.08 THz. The required (absorbed) local-oscillator power is —20 nW. |
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