|
Records |
Links |
|
Author |
Hajenius, M.; Yang, Z. Q.; Gao, J. R.; Baselmans, J. J. A.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Optimized sensitivity of NbN hot electron bolometer mixers by annealing |
Type |
Journal Article |
|
Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
|
|
Volume |
17 |
Issue |
2 |
Pages |
399-402 |
|
|
Keywords |
NbN HEB mixers |
|
|
Abstract |
We report that the heterodyne sensitivity of superconducting hot-electron bolometers (HEBs) increases by 25-30% after annealing at 85degC in high vacuum. The devices studied are twin-slot antenna coupled mixers with a small area NbN bridge of 1 mum times 0.15 mum, above which there is a SiO 2 passivation layer. The mixer noise temperature, gain, and resistance versus temperature curve of a HEB before and after annealing are compared and analysed. We show that the annealing reduces the intrinsic noise of the mixer by 37% and makes the superconducting transition of the bridge and the contacts sharper. We argue that the reduction ofthe noise is mainly due to the improvement of the transparency of the contact/film interface. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and at a bath temperature of 4.2 K. |
|
|
Address ![sorted by Address field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1051-8223 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1426 |
|
Permanent link to this record |
|
|
|
|
Author |
Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Lobanov, Y.; Shcherbatenko, M.; Korneev, A.; Pernice, W.; Goltsman, G. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
|
|
Title |
Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application |
Type |
Conference Article |
|
Year |
2017 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
|
|
Volume |
917 |
Issue |
|
Pages |
062032 |
|
|
Keywords |
SSPD, SNSPD, waveguide |
|
|
Abstract |
With use of the travelling-wave geometry approach, integrated superconductor- nanophotonic devices based on silicon nitride nanophotonic waveguide with a superconducting NbN-nanowire suited on top of the waveguide were fabricated. NbN-nanowire was operated as a single-photon counting detector with up to 92 % on-chip detection efficiency in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 106 in C-band at 1550 nm wavelength |
|
|
Address ![sorted by Address field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
RPLAB @ kovalyuk @ |
Serial |
1140 |
|
Permanent link to this record |
|
|
|
|
Author |
Korneev, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Pernice, W.; An, P.; Golikov, A.; Zubkova, E.; Goltsman, G. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Superconducting Single-Photon Detectors for Integrated Nanophotonics Circuits |
Type |
Conference Article |
|
Year |
2017 |
Publication |
16th ISEC |
Abbreviated Journal |
16th ISEC |
|
|
Volume |
|
Issue |
|
Pages |
1-3 |
|
|
Keywords |
SSPD, SNSPD |
|
|
Abstract |
We present an overview of our recent achievements in integration of superconducting nanowire single-photon detectors SNSPD with dielectric optical waveguides. We are able to produce complex nanophotonics integrated circuits containing optical elements and photon detector on single chip thus producing a compact integrated platform for quantum optics applications. |
|
|
Address ![sorted by Address field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
8314200 |
Serial |
1200 |
|
Permanent link to this record |
|
|
|
|
Author |
Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
|
|
Title |
Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform |
Type |
Conference Article |
|
Year |
2017 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
|
|
Volume |
917 |
Issue |
|
Pages |
062042 |
|
|
Keywords |
Si3N4, Bragg waveguides |
|
|
Abstract |
We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating |
|
|
Address ![sorted by Address field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
RPLAB @ kovalyuk @ |
Serial |
1141 |
|
Permanent link to this record |
|
|
|
|
Author |
Chuprina, I. N.; An, P. P.; Zubkova, E. G.; Kovalyuk, V. V.; Kalachev, A. A.; Gol'tsman, G. N. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
|
|
Title |
Optimisation of spontaneous four-wave mixing in a ring microcavity |
Type |
Conference Article |
|
Year |
2017 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
|
|
Volume |
47 |
Issue |
10 |
Pages |
887-891 |
|
|
Keywords |
ring microcavity |
|
|
Abstract |
Abstract. A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the disper- sion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numeri- cal calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: com- pletely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable. |
|
|
Address ![sorted by Address field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
RPLAB @ kovalyuk @ |
Serial |
1142 |
|
Permanent link to this record |
|
|
|
|
Author |
Флоря, И. Н. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
|
|
Title |
Ультрабыстрый однофотонный детектор для оптических применений |
Type |
Conference Article |
|
Year |
2009 |
Publication |
Науч. сессия МИФИ |
Abbreviated Journal |
Науч. сессия МИФИ |
|
|
Volume |
|
Issue |
|
Pages |
45-46 |
|
|
Keywords |
SSPD |
|
|
Abstract |
Представлен сверхпроводниковый однофотонный детектор (SSPD) на основе ультратонкой пленки NbN, обладающий рекордным быстродействием. Активный элемент выполнен в виде N сверхпроводящих полосок соединенных параллельно, покрывающих площадку размером 10 мкм х 10 мкм. Для SSPD с N=12 длительность импульса напряжения составляет 200 пс. Полученные результаты открывают путь к детекторам обладающими скоростью счета свыше 1 ГГц, что делает SSPDs весьма привлекательными во многих применениях, в частности для квантовой криптографии. SSPD хорошо согласуется с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему. |
|
|
Address ![sorted by Address field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
978-5-7262-1042-1 |
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
УДК 533.14(06)+004.056(06) Фотоника и информационная оптика |
Approved |
no |
|
|
Call Number |
|
Serial |
1145 |
|
Permanent link to this record |
|
|
|
|
Author |
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
Type |
Journal Article |
|
Year |
2019 |
Publication |
Phys. Status Solidi RRL |
Abbreviated Journal |
Phys. Status Solidi RRL |
|
|
Volume |
13 |
Issue |
9 |
Pages |
1900187-(1-6) |
|
|
Keywords |
|
|
|
Abstract |
For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. |
|
|
Address ![sorted by Address field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1862-6254 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1149 |
|
Permanent link to this record |
|
|
|
|
Author |
Семенов, Александр Владимирович |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
|
|
Title |
Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников |
Type |
Manuscript |
|
Year |
2010 |
Publication |
М. МПГУ |
Abbreviated Journal |
|
|
|
Volume |
|
Issue |
|
Pages |
|
|
|
Keywords |
SSPD, SNSPD, response |
|
|
Abstract |
|
|
|
Address ![sorted by Address field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
Ph.D. thesis |
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
Russian |
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1150 |
|
Permanent link to this record |
|
|
|
|
Author |
Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Planar Schottky diode with a Γ-shaped anode suspended bridge |
Type |
Conference Article |
|
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
|
|
Volume |
1695 |
Issue |
|
Pages |
012154 |
|
|
Keywords |
Schottky diode, GaAs, InP substrate |
|
|
Abstract |
In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate. |
|
|
Address ![sorted by Address field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1742-6588 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1152 |
|
Permanent link to this record |
|
|
|
|
Author |
Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
|
|
Title |
Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector |
Type |
Conference Article |
|
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
|
|
Volume |
1695 |
Issue |
|
Pages |
012156 |
|
|
Keywords |
Shottky diode, THz, direct detector, multipixel camera |
|
|
Abstract |
In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns. |
|
|
Address ![sorted by Address field, descending order (down)](https://db.rplab.ru/refbase/img/sort_desc.gif) |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1742-6588 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1153 |
|
Permanent link to this record |