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Hartogh P, Jarchow C, Lellouch E, de Val-Borro M, Rengel M, Moreno R, et al. Herschel/HIFI observations of Mars: First detection of O2 at submillimetre wavelengths and upper limits on HCl and H2O2. Astron. Astrophys.. 2010;521:L49.
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Tretyakov I, Shurakov A, Perepelitsa A, Kaurova N, Svyatodukh S, Zilberley T, et al. Silicon room temperature IR detectors coated with Ag2S quantum dots. In: Proc. IWQO.; 2019. p. 369–71.
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Samsonova A, Zolotov P, Baeva E, Lomakin A, Titova N, Kardakova A, et al. Signatures of surface magnetic disorder in thin niobium films. IEEE Trans. Appl. Supercond.. 2021:1.
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Shcherbatenko M, Lobanov Y, Finkel M, Maslennikov S, Pentin I, Semenov A, et al. Development of a 30 THz heterodyne receiver based on a hot-electron-bolometer mixer [abstract]. In: Proc. 25th Int. Symp. Space Terahertz Technol.; 2014. 122.
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Bell M, Sergeev A, Goltsman G, Bird J, Verevkin A. Transition-edge sensors based on superconducting nanowires [abstract]. In: Proc. APS March Meeting.; 2006. B38.00001.
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Gershenzon E, Goltsman G, Orlov L, Ptitsina N. Population of excited-states of small admixtures in germanium. In: Izv. Akad. Nauk SSSR, Seriya Fizicheskaya. Vol 42. Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia; 1978. p. 1154–9.
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Gershenzon EM, Gol'tsman GN, Ptitsyna NG. Carrier lifetime in excited states of shallow impurities in germanium. JETP Lett. 1977;25(12):539–43.
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Gershenzon EM, Goltsman GN, Orlov L. Investigation of population and ionization of donor excited states in Ge. In: Physics of Semiconductors. North-Holland Publishing Co.; 1976. p. 631–4.
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Gershenzon EM, Goltsman GN, Ptitsyna NG. Investigation of excited donor states in GaAs. Sov Phys Semicond. 1974;7(10):1248–50.
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Gershenzon EM, Gol'tsman GN. Transitions of electrons between excited states of donors in germanium. JETP Lett. 1971;14(2):63–5.
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