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Cao Q, Yoon SF, Tong CZ, Ngo CY, Liu CY, Wang R, et al. Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers. Appl Phys Lett. 2009;95(19):3.
Abstract: The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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