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Divochiy A, Marsili F, Bitauld D, Gaggero A, Leoni R, Mattioli F, et al. Superconducting nanowire photon-number-resolving detector at telecommunication wavelengths. Nat Photon. 2008;2(5):302–6.
Abstract: Optical-to-electrical conversion, which is the basis of the operation of optical detectors, can be linear or nonlinear. When high sensitivities are needed, single-photon detectors are used, which operate in a strongly nonlinear mode, their response being independent of the number of detected photons. However, photon-number-resolving detectors are needed, particularly in quantum optics, where n-photon states are routinely produced. In quantum communication and quantum information processing, the photon-number-resolving functionality is key to many protocols, such as the implementation of quantum repeaters1 and linear-optics quantum computing2. A linear detector with single-photon sensitivity can also be used for measuring a temporal waveform at extremely low light levels, such as in long-distance optical communications, fluorescence spectroscopy and optical time-domain reflectometry. We demonstrate here a photon-number-resolving detector based on parallel superconducting nanowires and capable of counting up to four photons at telecommunication wavelengths, with an ultralow dark count rate and high counting frequency.
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Korneev A, Vachtomin Y, Minaeva O, Divochiy A, Smirnov K, Okunev O, et al. Single-photon detection system for quantum optics applications. IEEE J Select Topics Quantum Electron. 2007;13(4):944–51.
Abstract: We describe the design and characterization of a fiber-coupled double-channel single-photon detection system based on superconducting single-photon detectors (SSPD), and its application for quantum optics experiments on semiconductor nanostructures. When operated at 2-K temperature, the system shows 10% quantum efficiency at 1.3-¿m wavelength with dark count rate below 10 counts per second and timing resolution <100 ps. The short recovery time and absence of afterpulsing leads to counting frequencies as high as 40 MHz. Moreover, the low dark count rate allows operation in continuous mode (without gating). These characteristics are very attractive-as compared to InGaAs avalanche photodiodes-for quantum optics experiments at telecommunication wavelengths. We demonstrate the use of the system in time-correlated fluorescence spectroscopy of quantum wells and in the measurement of the intensity correlation function of light emitted by semiconductor quantum dots at 1300 nm.
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Marsili F, Bitauld D, Fiore A, Gaggero A, Mattioli F, Leoni R, et al. Photon-number-resolution at telecom wavelength with superconducting nanowires [Internet].; 2010 [cited 2024 Jun 9].IntechOpen [DOI:10.5772/6920]. Available from: http://dx.doi.org/10.5772/6920
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Marsili F, Najafi F, Dauler E, Bellei F, Hu X, Csete M, et al. Single-photon detectors based on ultranarrow superconducting nanowires. Nano Lett. 2011;11(5):2048–2053.
Abstract: We report efficient single-photon detection (η = 20% at 1550 nm wavelength) with ultranarrow (20 and 30 nm wide) superconducting nanowires, which were shown to be more robust to constrictions and more responsive to 1550 nm wavelength photons than standard superconducting nanowire single-photon detectors, based on 90 nm wide nanowires. We also improved our understanding of the physics of superconducting nanowire avalanche photodetectors, which we used to increase the signal-to-noise ratio of ultranarrow-nanowire detectors by a factor of 4, thus relaxing the requirements on the read-out circuitry and making the devices suitable for a broader range of applications.
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Marsili F, Najafi F, Herder C, Berggren KK. Electrothermal simulation of superconducting nanowire avalanche photodetectors. Appl Phys Lett. 2011;98(9):3.
Abstract: We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.
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