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Cherednichenko S, Khosropanah P, Adam A, Merkel HF, Kollberg EL, Loudkov D, et al. 1.4- to 1.7-THz NbN hot-electron bolometer mixer for the Herschel space observatory. In: Phillips TG, Zmuidzinas J, editors. Proc. SPIE. Vol 4855. SPIE; 2003. p. 361–70.
Abstract: NbN hot- electron bolometer mixers have reached the level of 10hv/k in terms of the input noise temperature with the noise bandwidth of 4-6 GHz from subMM band up to 2.5 THz. In this paper we discuss the major characteristics of this kind of receiver, i.e. the gain and the noise bandwidth, the noise temperature in a wide RF band, bias regimes and optimisation of RF coupling to the quasioptical mixer. We present the status of the development of the mixer for Band 6 Low for Herschel Telescope.
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Merkel HF, Khosropanah P, Sigfrid Yngvesson K, Cherednichenko S, Kroug M, Adam A, et al. An active zone small signal model for hot-electron bolometric mixers. In: Proc. 12th Int. Symp. Space Terahertz Technol. San Diego, CA, USA; 2001. 55.
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Merkel HF, Yagoubov PA, Kroug M, Khosropanah P, Kollberg EL, Gol’tsman GN, et al. Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies. In: Proc. 28th European Microwave Conf. Vol 1.; 1998. p. 294–9.
Abstract: In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point.
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