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Anfertev V, Vaks V, Revin L, Pentin I, Tretyakov I, Goltsman G, et al. High resolution THz gas spectrometer based on semiconductor and superconductor devices. In: EPJ Web Conf. Vol 132.; 2017. 02001 (1 to 2).
Abstract: The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined.
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Belosevich VV, Gayduchenko IA, Titova NA, Zhukova ES, Goltsman GN, Fedorov GE, et al. Response of carbon nanotube film transistor to the THz radiation. In: EPJ Web Conf. Vol 195.; 2018. 05012 (1 to 2).
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Elezov MS, Ozhegov RV, Goltsman GN, Makarov V, Vinogradov EA, Naumov AV, et al. Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system. In: EPJ Web Conf. Vol 132.; 2017. 01004 (1 to 2).
Abstract: Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched” in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.
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Elezov MS, Ozhegov RV, Kurochkin YV, Goltsman GN, Makarov VS, Samartsev VV, et al. Countermeasures against blinding attack on superconducting nanowire detectors for QKD. In: EPJ Web Conf. Vol 103.; 2015. 10002 (1 to 2).
Abstract: Nowadays, the superconducting single-photon detectors (SSPDs) are used in Quantum Key Distribution (QKD) instead of single-photon avalanche photodiodes. Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing technique. We developed the autoreset system which returns the SSPD to superconducting state when it is latched. We investigate latched state of the SSPD and define limit conditions for effective blinding attack. Peculiarity of the blinding attack is a long nonsingle photon response of the SSPD. It is much longer than usual single photon response. Besides, we need follow up response duration of the SSPD. These countermeasures allow us to prevent blind attack on SSPDs for Quantum Key Distribution.
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Elezov M, Scherbatenko M, Sych D, Goltsman G, Arakelyan S, Evlyukhin A, et al. Towards the fiber-optic Kennedy quantum receiver. In: EPJ Web Conf. Vol 220.; 2019. 03011 (1 to 2).
Abstract: We consider practical aspects of using standard fiber-optic elements and superconducting nanowire single-photon detectors for the development of a practical quantum receiver based on the Kennedy scheme. Our receiver allows to discriminate two phase-modulated coherent states of light at a wavelength of 1.5 microns in continuous mode with bit rate 200 Kbit/s and error rate about two times below the standard quantum limit.
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Elmanov I, Elmanova A, Komrakova S, Golikov A, Kaurova N, Kovalyuk V, et al. Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform. In: EPJ Web Conf. Vol 220.; 2019. 03012.
Abstract: In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
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Elmanova A, Elmanov I, Komrakova S, Golikov A, Javadzade J, Vorobyev V, et al. Integration of nanodiamonds with NV-centers on optical silicon nitride structures. In: EPJ Web Conf. Vol 220.; 2019. 03013.
Abstract: In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources.
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Goltsman G, Naumov AV, Gladush MG, Karimullin KR. Quantum photonic integrated circuits with waveguide integrated superconducting nanowire single-photon detectors. In: EPJ Web Conf. Vol 190.; 2018. 02004 (1 to 2).
Abstract: We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.
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Korneev A, Kovalyuk V, An P, Golikov A, Zubkova E, Ferrari S, et al. Superconducting single-photon detector for integrated waveguide spectrometer. In: EPJ Web Conf. Vol 190.; 2018. 04009.
Abstract: We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector.
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Korneeva Y, Vodolazov D, Florya I, Manova N, Smirnov E, Korneev A, et al. Single photon detection in micron scale NbN and α-MoSi superconducting strips. In: EPJ Web Conf. Vol 190.; 2018. 04010 (1 to 2).
Abstract: We experimentally demonstrate the single photon detection in straight micrometer-wide NbN and α-MoSi bridges. Width of the bridges is 2 µm, while the wavelength of the photon changes from 408 to 1550 nm and critical current exceeds 50% of the depairing current. Obtained results offer the alternative route for design of detectors without resonator and meander structure and indirectly confirm vortex assisted mechanism of single photon detection.
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