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Aksaev EE, Gershenzon EM, Gol'tsman GN, Semenov AD, Sergeev AV. Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures. JETP Lett. 1989;50(5):283–6.
Abstract: The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs.
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Baeva EM, Titova NA, Kardakova AI, Piatrusha SU, Khrapai VS. Universal bottleneck for thermal relaxation in disordered metallic films. Jetp Lett. 2020;111(2):104–8.
Abstract: We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.
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Gershenzon EM, Gershenzon ME, Gol'tsman GN, Karasik BS, Semenov AD, Sergeev AV. Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound. JETP Lett. 1987;46(6):285–7.
Abstract: For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals.
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Gershenzon EM, Gershenzon ME, Gol'tsman GN, Semenov AD, Sergeev AV. Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state. JETP Lett. 1982;36(7):296–9.
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Gershenzon EM, Gol'tsman GN. Transitions of electrons between excited states of donors in germanium. JETP Lett. 1971;14(2):63–5.
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Gershenzon EM, Gol'tsman GN, Emtsev VV, Mashovets TV, Ptitsyna NG, Ryvkin SM. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett. 1971;14(6):241.
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Gershenzon EM, Gol'tsman GN, Karasik BS, Semenov AD. Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum. JETP Lett. 1987;46(5):237–8.
Abstract: For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6.
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Gershenzon EM, Gol'tsman GN, Mel'nikov AP. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett. 1971;14(5):185–6.
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Gershenzon EM, Gol'tsman GN, Multanovskii VV, Ptitsina NG. Cross section for binding of free carriers into excitons in germanium. JETP Lett. 1981;33(11):574.
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Gershenzon EM, Gol'tsman GN, Ptitsina NG. Observation of the free-exciton spectrum at submillimeter wavelengths. JETP Lett. 1972;16(4):161–2.
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