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An Z, Chen J-C, Ueda T, Komiyama S, Hirakawa K. Infrared phototransistor using capacitively coupled two-dimensional electron gas layers. Appl Phys Lett. 2005;86:172106-3.
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Baek B, Lita AE, Verma V, Nam SW. Superconducting a-WxSi1–x nanowire single-photon detector with saturated internal quantum efficiency from visible to 1850 nm. Appl Phys Lett. 2011;98(25):3.
Abstract: We have developed a single-photon detector based on superconducting amorphous tungsten–silicon alloy (a-WxSi1–x) nanowire. Our device made from a uniform a-WxSi1–x nanowire covers a practical detection area (16 μm×16 μm) and shows high sensitivity featuring a plateau of the internal quantum efficiencies, i.e., efficiencies of generating an electrical pulse per absorbed photon, over a broad wavelength and bias range. This material system for superconducting nanowire detector technology could overcome the limitations of the prevalent nanowire devices based on NbN and lead to more practical, ideal single-photon detectors having high efficiency, low noise, and high count rates.
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Barends R, Hajenius M, Gao JR, Klapwijk TM. Current-induced vortex unbinding in bolometer mixers. Appl Phys Lett. 2005;87:263506 (1 to 3).
Abstract: We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth.
Keywords: HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile
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Baryshev A., Hovenier J.N., Adam A.J.L., Kašalynas I., Gao J.R., Klaassen T.O., et al. Phase locking and spectral linewidth of a two-mode terahertz quantum cascade laser. Physics Letters. 2006;89.
Abstract: We have studied the phase locking and spectral linewidth of an ~ 2.7 THz quantum cascade laser by mixing its two lateral lasing modes. The beat signal at about 8 GHz is compared with a microwave eference by applying conventional phase lock loop circuitry with feedback to the laser bias current. Phase locking has been demonstrated, resulting in a narrow beat linewidth of less than 10 Hz. Under requency stabilization we find that the terahertz line profile is essentially Lorentzian with a minimum linewidth of ~ 6.3 kHz. Power dependent measurements suggest that this linewidth does not approach the Schawlow-Townes limit.
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Burke PJ, Schoelkopf RJ, Prober DE, Skalare A, Karasik BS, Gaidis MC, et al. Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers. Appl Phys Lett. 1998;72(12):1516–8.
Abstract: A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band).
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Cao Q, Yoon SF, Tong CZ, Ngo CY, Liu CY, Wang R, et al. Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers. Appl Phys Lett. 2009;95(19):3.
Abstract: The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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Dorenbos SN, Reiger EM, Perinetti U, Zwiller V, Zijlstra T, Klapwijk TM. Low noise superconducting single photon detectors on silicon. Appl Phys Lett. 2008;93(13):131101.
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Floet DW, Baselmans JJA, Klapwijk TM, Gao JR. Resistive transition of niobium superconducting hot-electron bolometer mixers. Appl Phys Lett. 1998;73(19):2826.
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Fu K, Zannoni R, Chan C, Adams SH, Nicholson J, Polizzi E, et al. Terahertz detection in single wall carbon nanotubes. Appl Phys Lett. 2008;92(3):033105.
Abstract: It is reported that terahertz radiation from 0.69 to 2.54 THz has been sensitively detected in a device consisting of bundles of carbon nanotubes containing single wall metallic carbon nanotubes, quasioptically coupled through a lithographically fabricated antenna, and a silicon lens. The measured data are consistent with a bolometric detection process in the metallic tubes and the devices show promise for operation well above 4.2 K.
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Gaggero A, Nejad SJ, Marsili F, Mattioli F, Leoni R, Bitauld D, et al. Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl Phys Lett. 2010;97(15):3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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