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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
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Year |
1976 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
43 |
Issue |
1 |
Pages |
116-122 |
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Keywords |
Ge, free excitons |
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Abstract |
Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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1731 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Submillimeter spectroscopy of semiconductors |
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Journal Article |
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Year |
1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
37 |
Issue |
2 |
Pages |
299-304 |
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Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
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The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
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Title |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
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Journal Article |
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Year |
1991 |
Publication |
Phys. B Condens. Mat. |
Abbreviated Journal |
Phys. B Condens. Mat. |
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Volume |
169 |
Issue |
1-4 |
Pages |
629-630 |
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Keywords |
impure superconductors |
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Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that frequency range of enhancement effect narrows with the decrease of electron mean free path, ℓ, and at ℓ⩽1nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on ℓ are explained by taking into account strong electron-electron interaction in impure metals. |
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0921-4526 |
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1682 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
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Title |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
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1990 |
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Solid State Communications |
Abbreviated Journal |
Solid State Communications |
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75 |
Issue |
8 |
Pages |
639-641 |
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Keywords |
impure superconductors |
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Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals. |
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0038-1098 |
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1687 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
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Title |
Capture of photoexcited carriers by shallow impurity centers in germanium |
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Journal Article |
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Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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50 |
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4 |
Pages |
728-734 |
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Keywords |
Ge, photoexcited carriers, shallow impurity centers |
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Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. |
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1720 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Kinetics of electron and hole binding into excitons in germanium |
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Journal Article |
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Year |
1983 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
57 |
Issue |
2 |
Pages |
369-376 |
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Keywords |
Ge, electron and hole binding |
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The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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1711 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Cross section for binding of free carriers into excitons in germanium |
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Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
33 |
Issue |
11 |
Pages |
574 |
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Keywords |
Ge, excitons, photoconductivity |
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1718 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I. |
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Title |
Submillimeter backward-wave-tube spectrometer-relaxometer |
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Journal Article |
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1987 |
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Pribory i Tekhnika Eksperimenta |
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Pribory i Tekhnika Eksperimenta |
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30 |
Issue |
4 |
Pages |
131-137 |
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Keywords |
BWO, applications |
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A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops. |
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Russian |
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1699 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
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Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
Issue |
5 |
Pages |
185-186 |
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Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
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Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
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Journal Article |
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1987 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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46 |
Issue |
5 |
Pages |
237-238 |
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Keywords |
YBCO HTS detectors |
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For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. |
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1703 |
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