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Verevkin A, Zhang J, Sobolewski R, Lipatov A, Okunev O, Chulkova G, et al. Detection efficiency of large-active-area NbN single-photon superconducting detectors in the ultraviolet to near-infrared range. Appl. Phys. Lett.. 2002;80(25):4687–9.
Abstract: We report our studies on spectral sensitivity of meander-type, superconducting NbN thin-film single-photon detectors (SPDs), characterized by GHz counting rates of visible and near-infrared photons and negligible dark counts. Our SPDs exhibit experimentally determined quantum efficiencies ranging from ∼0.2% at the 1.55 μm wavelength to ∼70% at 0.4 μm. Spectral dependences of the detection efficiency (DE) at the 0.4 to 3.0-μm-wavelength range are presented. The exponential character of the DE dependence on wavelength, as well as its dependence versus bias current, is qualitatively explained in terms of superconducting fluctuations in our ultrathin, submicron-width superconducting stripes. The DE values of large-active-area NbN SPDs in the visible range are high enough for modern quantum communications.
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Verevkin AA, Ptitsina NG, Smirnov KV, Voronov BM, Gol’tsman GN, Gershenson EM, et al. Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts. Semicond. 1999;33(5):551–4.
Abstract: The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.
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Verevkin AA, Ptitsina NG, Smirnov KV, Gol’tsman GN, Gershenzon EM, Ingvesson KS. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K. JETP Lett. 1996;64(5):404–9.
Abstract: The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
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Verevkin AA, Ptitsina NG, Smirnov KV, Goltsman GN, Gershenson EM, Yngvesson KS. Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range. In: Proc. 4-th Int. Semicond. Device Research Symp.; 1997. p. 55–8.
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Verevkin AA, Ptitsina NG, Smirnov KV, Gol'tsman GN, Voronov BM, Gershenzon EM, et al. Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In: Proc. 4-th Int. Semicond. Device Research Symp.; 1997. p. 163–6.
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Verevkin AA, Pearlman A, Slysz W, Zhang J, Sobolewski R, Chulkova G, et al. Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications. In: Donkor E, Pirich AR, Brandt HE, editors. Proc. SPIE. Vol 5105. SPIE; 2003. p. 160–70.
Abstract: We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.
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Vasilev DD, Malevannaya EI, Moiseev KM, Zolotov PI, Antipov AV, Vakhtomin YB, et al. Influence of deposited material energy on superconducting properties of the WSi films. In: IOP Conf. Ser.: Mater. Sci. Eng. Vol 781.; 2020. 012013 (1 to 6).
Abstract: WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
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Vakhtomin YB, Finkel MI, Antipov SV, Smirnov KV, Kaurova NS, Drakinskii VN, et al. The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J of communications technol & electronics. 2003;48(6):671–5.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Vahtomin YB, Finkel MI, Antipov SV, Voronov BM, Smirnov KV, Kaurova NS, et al. Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si. In: Harvard university, editor. Proc. 13th Int. Symp. Space Terahertz Technol. Cambridge, MA, USA; 2002. p. 259–70.
Abstract: We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.
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Vachtomin YB, Antipov SV, Kaurova NS, Maslennikov SN, Smirnov KV, Polyakov SL, et al. Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess. In: Proc. 29th IRMMW / 12th THz. Karlsruhe, Germany; 2004. p. 329–30.
Abstract: We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area.
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