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Siemsen KJ, Bernard JE, Madej AA, Marmet L. Absolute frequency measurement of a CO2/OsO4 stabilized laser at 28.8 THz. Appl Phys B: Lasers and Optics. 2001;72:567–73.
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Shitov SV, Levitchev M, Veretennikov AV, Koshelets VP, Prokopenko GV, Filippenko LV, et al. Superconducting integrated receiver as 400-600 GHz tester for coolable devices. IEEE Trans. Appl. Supercond.. 2001;11(1):832–5.
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Shi SC, Chin CC, Wang MJ, Shan WL, Zhang W, Noguchi T. Development of a 600–720 GHz SIS Mixer for the SMART. In: Jet Propulsion Laboratory CIit.u.t.e of T, editor. Proc. 12th Int. Symp. Space Terahertz Technol. San Diego, CA, USA; 2001. 215.
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Shelkovnikov A, Grain C, Nguyen CT, Butcher RJ, Amy-Klein A, Chardonnet C. 500-Hz two-photon Ramsey fringes with a SF6 beam: towards a new frequency standard in the 30-THz spectral region. Appl Phys B: Lasers and Optics. 2001;73:93–8.
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Semenov A, Goltsman G, Korneev A. Quantum detection by current carrying superconducting film. Phys C: Supercond. 2001;351(4):349–56.
Abstract: We describe a novel quantum detection mechanism in the superconducting film carrying supercurrent. The mechanism incorporates growing normal domain and breaking of superconductivity by the bias current. A single photon absorbed in the film creates transient normal spot that causes redistribution of the current and, consequently, increase of the current density in superconducting areas. When the current density exceeds the critical value, the film switches into resistive state and generates the voltage pulse. Analysis shows that a submicron-wide film of conventional low temperature superconductor operated in liquid helium may detect single far-infrared photon. The amplitude and duration of the voltage pulse are in the millivolt and picosecond range, respectively. The quantitative model is presented that allows simulation of the detector utilizing this detection mechanism.
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Puscasu I, Boreman GD. Theoretical and experimental analysis of transmission and enchanced absorption of frequency selective surfaces in the infrared. In: Proc. SPIE. Vol 4293.; 2001. p. 185–90.
Abstract: A comparative study between theory and experiment is presented for transmission through lossy frequency selective surfaces (FSSs) on silicon in the 2 – 15 micrometer range. Important parameters controlling the resonance shape and location are identified: dipole length, spacing, impedance, and dielectric surroundings. Their separate influence is exhibited. The primary resonance mechanism of FSSs is the resonance of the individual metallic patches. There is no discernable resonance arising from a feed-coupled configuration. The real part of the element's impedance controls the minimum value of transmission, while scarcely affecting its location. Varying the imaginary part shifts the location of resonance, while only slightly changing the minimum value of transmission. With such fine-tuning, it is possible to make a good fit between theory and experiment near the dipole resonance on any sample. A fixed choice of impedance can provide a reasonable fit to all samples fabricated under the same conditions. The dielectric surroundings change the resonance wavelength of the FSS compared to its value in air. The presence of FSS on the substrate increases the absorptivity/emissivity of the surface in a resonant way. Such enhancement is shown for dipole and cross arrays at several wavelengths.
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Murk A, Kämpfer N, Wylde R, Inatani J, Manabe T, Seta M. Characterization of various quasi-optical components for the submillimeter limb-sounder SMILES. In: Proc. 12th Int. Symp. Space Terahertz Technol.; 2001. p. 426–35.
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Merkel HF, Khosropanah P, Sigfrid Yngvesson K, Cherednichenko S, Kroug M, Adam A, et al. An active zone small signal model for hot-electron bolometric mixers. In: Proc. 12th Int. Symp. Space Terahertz Technol. San Diego, CA, USA; 2001. 55.
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Mel’nikov AP, Gurvich YA, Shestakov LN, Gershenzon EM. Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon. Jetp Lett. 2001;73(1):44–7.
Abstract: The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
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Kroug M, Cherednichenko S, Merkel H, Kollberg E, Voronov B, Gol'tsman G, et al. NbN hot electron bolometric mixers for terahertz receivers. IEEE Trans Appl Supercond. 2001;11(1):962–5.
Abstract: Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.
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