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Karasik BS, Zorin MA, Milostnaya II, Elantev AI, Gol’tsman GN, Gershenzon EM. Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films. In: Buhrman RA, Clarke JT, Daly K, Koch RH, Luine JA, Simon RW, editors. Proc. SPIE. Vol 2160. SPIE; 1994. p. 74–82.
Abstract: We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
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Yngvesson KS, Gerecht E, Musante CF, Zhuang Y, Ji M, Goyette TM, et al. Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN. In: Hwu RJ, Wu K, editors. Proc. SPIE. Vol 3795. SPIE; 1999. p. 357–68.
Abstract: We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible.
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Huebers H-W, Schubert J, Semenov A, Gol’tsman GN, Voronov BM, Gershenzon EM, et al. NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers. In: Chamberlain JM, editor. Proc. SPIE. Vol 3828. Spie; 1999. p. 410–6.
Abstract: We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed.
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