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Yagubov P, Gol'tsman G, Voronov B, Seidman L, Siomash V, Cherednichenko S, et al. The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate. In: Proc. 7th Int. Symp. Space Terahertz Technol. Charlottesville, Virginia, USA; 1996. p. 290–302.
Abstract: We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K.
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Semenov A, Richter H, Smirnov K, Voronov B, Gol'tsman G, Hübers H-W. The development of terahertz superconducting hot-electron bolometric mixers. Supercond Sci Technol. 2004;17(5):436–9.
Abstract: We present recent advances in the development of NbN hot-electron bolometric (HEB) mixers for flying terahertz heterodyne receivers. Three important issues have been addressed: the quality of the source NbN films, the effect of the bolometer size on the spectral properties of different planar feed antennas, and the local oscillator (LO) power required for optimal operation of the mixer. Studies of the NbN films with an atomic force microscope indicated a surface structure that may affect the performance of the smallest mixers. Measured spectral gain and noise temperature suggest that at frequencies above 2.5 THz the spiral feed provides better overall performance than the double-slot feed. Direct measurements of the optimal LO power support earlier estimates made in the framework of the uniform mixer model.
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Cherednichenko S, Yagoubov P, Il'In K, Gol'tsman G, Gershenzon E. Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates. In: Proc. 8th Int. Symp. Space Terahertz Technol.; 1997. p. 245–57.
Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
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Kawamura J, Blundell R, Tong C-YE, Gol'tsman G, Gershenzon E, Voronov B, et al. Phonon-cooled NbN HEB mixers for submillimeter wavelengths. In: Proc. 8th Int. Symp. Space Terahertz Technol.; 1997. p. 23–8.
Abstract: The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz.
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Ekstörm H, Kollberg E, Yagoubov P, Gol'tsman G, Gershenzon E, Yngvesson S. Gain and noise bandwidth of NbN hot-electron bolometric mixers. Appl Phys Lett. 1997;70(24):3296–8.
Abstract: We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
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Sobolewski R, Verevkin A, Gol'tsman GN, Lipatov A, Wilsher K. Ultrafast superconducting single-photon optical detectors and their applications. IEEE Trans. Appl. Supercond.. 2003;13(2):1151–7.
Abstract: We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications.
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Gerecht E, Musante CF, Jian H, Yngvesson KS, Dickinson J, Waldman J, et al. Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz. In: Proc. 9th Int. Symp. Space Terahertz Technol.; 1998. p. 105–14.
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Kawamura JH, Tong C-YE, Blundell R, Cosmo Papa D, Hunter TR, Gol'tsman G, et al. An 800 GHz NbN phonon-cooled hot-electron bolometer mixer receiver. IEEE Trans Appl Supercond. 1999;9(2):3753–6.
Abstract: We describe a heterodyne receiver developed for astronomical applications to operate in the 350 /spl mu/m atmospheric window. The waveguide receiver employs a superconductive NbN phonon-cooled hot-electron bolometer mixer. The double sideband receiver noise temperature closely follows 1 kGHz/sup -1/ across 780-870 GHz, with the intermediate frequency centered at 1.4 GHz. The conversion loss is about 15 dB. The receiver was installed for operation at the University of Arizona/Max Planck Institute for Radio Astronomy Submillimeter Telescope facility. The instrument was successfully used to conduct test observations of a number of celestial sources in a number of astronomically important spectral lines.
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Yagoubov P, Kroug M, Merkel H, Kollberg E, Schubert J, Hübers H-W. NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz. Supercond Sci Technol. 1999;12(11):989–91.
Abstract: The performance of NbN-based phonon-cooled hot electron bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1-0.2 µm; the width is 1-2 µm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power requirement is less than 500 nW at the receiver input. First results on spiral antenna polarization measurements are reported.
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Il’in KS, Milostnaya II, Verevkin AA, Gol’tsman GN, Gershenzon EM, Sobolewski R. Ultimate quantum efficiency of a superconducting hot-electron photodetector. Appl Phys Lett. 1998;73(26):3938–40.
Abstract: The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs.
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