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Author |
Title |
Year |
Publication |
DOI ![sorted by DOI field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
Links |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of electron and hole binding into excitons in germanium |
1983 |
Sov. Phys. JETP |
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Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. |
Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves |
1986 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
1995 |
JETP |
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Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
2002 |
Mater. Sci. Forum |
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Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I. |
Electron-phonon scattering rate in impure NbC films |
1998 |
NASA/ADS |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
1996 |
J. of Communications Technology and Electronics |
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Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
1995 |
JETP Lett. |
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Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Low energy excitation in La2CuO4 |
1990 |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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