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Shangina EL, Smirnov KV, Morozov DV, Kovalyuk VV, Goltsman GN, Verevkin AA, et al. Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements. Semicond Sci Technol. 2011;26(2):025013.
Abstract: We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
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Zhang W, Miao W, Zhong JQ, Shi SC, Hayton DJ, Vercruyssen N, et al. Temperature dependence of the receiver noise temperature and IF bandwidth of superconducting hot electron bolometer mixers. Supercond Sci Technol. 2014;27(8):085013 (1 to 5).
Abstract: In this paper we study the temperature dependence of the receiver noise temperature and IF noise bandwidth of superconducting hot electron bolometer (HEB) mixers. Three superconducting NbN HEB devices of different transition temperatures (Tc) are measured at 0.85 THz and 1.4 THz at different bath temperatures (Tbath) between 4 K and 9 K. Measurement results demonstrate that the receiver noise temperature of superconducting NbN HEB devices is nearly constant for Tbath/Tc, less than 0.8, which is consistent with the simulation based on a distributed hot-spot model. In addition, the IF noise bandwidth appears independent of Tbath/Tc, indicating the dominance of phonon cooling in the investigated HEB devices.
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Korneeva YP, Mikhailov MY, Pershin YP, Manova NN, Divochiy AV, Vakhtomin YB, et al. Superconducting single-photon detector made of MoSi film. Supercond Sci Technol. 2014;27(9):095012.
Abstract: We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film.
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Galin MA, Klushin AM, Kurin VV, Seliverstov SV, Finkel MI, Goltsman GN, et al. Towards local oscillators based on arrays of niobium Josephson junctions. Supercond Sci Technol. 2015;28(5):055002 (1 to 7).
Abstract: Various applications in the field of terahertz technology are in urgent need of compact, wide-tunable solid-state continuous wave radiation sources with a moderate power. However, satisfactory solutions for the THz frequency range are scarce yet. Here we report on coherent radiation from a large planar array of Josephson junctions (JJs) in the frequency range between 0.1 and 0.3 THz. The external resonator providing the synchronization of JJ array is identified as a straight fragment of a single-strip-line containing the junctions themselves. We demonstrate a prototype of the quasioptical heterodyne receiver with the JJ array as a local oscillator and a hot-electron bolometer mixer.
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Shurakov A, Lobanov Y, Goltsman G. Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications. Supercond Sci Technol. 2015;29(2):023001.
Abstract: The discovery of hot-electron phenomena in a thin superconducting film in the last century was followed by numerous experimental studies of its appearance in different materials aiming for a better understanding of the phenomena and consequent implementation of terahertz detection systems for practical applications. In contrast to the competitors such as superconductor-insulator-superconductor tunnel junctions and Schottky diodes, the hot electron bolometer (HEB) did not demonstrate any frequency limitation of the detection mechanism. The latter, in conjunction with a decent performance, rapidly made the HEB mixer the most attractive candidate for heterodyne observations at frequencies above 1 THz. The successful operation of practical instruments (the Heinrich Hertz Telescope, the Receiver Lab Telescope, APEX, SOFIA, Hershel) ensures the importance of the HEB technology despite the lack of rigorous theoretical routine for predicting the performance. In this review, we provide a summary of experimental and theoretical studies devoted to understanding the HEB physics, and an overview of various fabrication routes and materials.
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Zvagelsky RD, Chubich DA, Kolymagin DA, Korostylev EV, Kovalyuk VV, Prokhodtsov AI, et al. Three-dimensional polymer wire bonds on a chip: morphology and functionality. J Phys D: Appl Phys. 2020;53(35):355102.
Abstract: Modern microchip-scale transceivers are capable of transmitting data at rates of the order of several terabits per second. In this regard, there is an urgent need to improve the interfaces connecting the chips and extend the bandpass of the interconnections. We use an approach combining silicon nitride nanophotonic circuits with 3D polymer waveguides fabricated by direct laser writing, which can be used as photonic interconnections or photonic wire bonds (PWB). These structures are designed, simulated, fabricated, and optimized for better light transmission at the telecommunication wavelength. An important part of this work is the study of the telecom signal transmission in a 3D polymer waveguide connecting two silicon nitride facing tapers. Two cases are considered: the tapers are one opposite the other or misaligned. Initially, the PWB shape was chosen to be Gaussian and then optimized: the top was circle-shaped and with the lower part still being Gaussian. Transmission losses were measured for both types of waveguides with different shapes. The idea of an optical multi-level crossing for photonic integrated circuits is also suggested as a solution to the problem of interconnections within a single chip.
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Gayduchenko IA, Fedorov GE, Moskotin MV, Yagodkin DI, Seliverstov SV, Goltsman GN, et al. Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices. Nanotechnol. 2018;29(24):245204 (1 to 8).
Abstract: We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.
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Antipov S, Trifonov A, Krause S, Meledin D, Kaurova N, Rudzinski M, et al. Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer. Supercond Sci Technol. 2019;32(7):075003.
Abstract: We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
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Angeluts AA, Bezotosnyi VV, Cheshev EA, Goltsman GN, Finkel MI, Seliverstov SV, et al. Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity. Laser Phys. Lett.. 2014;11(1):015004 (1 to 4).
Abstract: We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics.
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Gayduchenko I, Fedorov G, Titova N, Moskotin M, Obraztsova E, Rybin M, et al. Towards to the development of THz detectors based on carbon nanostructures. In: J. Phys.: Conf. Ser. Vol 1092.; 2018. 012039 (1 to 4).
Abstract: Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
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