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Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin films |
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Journal Article |
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Year |
1994 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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76 |
Issue |
3 |
Pages |
1902-1909 |
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Keywords |
YBCO HTS HEB detector, nonequilibrium response |
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Epitaxial laser deposited YBa2Cu3O7−δ films of ∼50 nm thickness were patterned into detectors consisting of ten parallel 1 μm wide strips in order to study nonequilibrium and bolometric effects. Typically, the patterned samples had critical temperatures around 86 K, transition widths around 2 K and critical current densities above 1×106A/cm2 at 77 K. Pulsed laser measurements at 0.8 μm wavelength (17 ps full width at half maximum) showed a ∼30 ps response, attributed to electron heating, followed by a slower bolometric decay. Amplitude modulation in the band fmod=100 kHz–10 GHz of a laser with wavelength λ=0.8 μm showed two different thermal relaxations in the photoresponse. Phonon escape from the film (∼3 ns) is the limiting process, followed by heat diffusion in the substrate. Similar relaxations were also seen for λ=10.6 μm. The photoresponse measurements were made with the film in the resistive state and extended into the normal state. These states were created by supercritical bias currents. Measurements between 75 and 95 K (i.e., from below to above Tc) showed that the photoresponse was proportional to dR/dT for fmod=1 MHz and 4 GHz. The fast response is limited by the electron‐phonon scattering time, estimated to 1.8 ps from experimental data. The responsivity both at 0.8 and 10.6 μm wavelength was ∼1.2 V/W at fmod=1 GHz and the noise equivalent power was calculated to 1.5×10−9 WHz−1/2 for the fast response. |
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0021-8979 |
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1637 |
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Lindgren, M.; Trifonov, V.; Zorin, M.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E.M. |
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Title |
Transient resistive photoresponse of YBa2Cu3O7−δ films using low power 0.8 and 10.6 μm laser radiation |
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Journal Article |
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Year |
1994 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
64 |
Issue |
22 |
Pages |
3036-3038 |
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Keywords |
YBCO HTS HEB, nonequilibrium |
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Thin YBa2Cu3O7−δ laser deposited films were patterned into devices consisting of ten parallel 1 μm wide strips. Nonequilibrium picosecond and bolometric photoresponses were studied by the use of 17 ps full width at half‐maximum laser pulses and amplitude modulated radiation from an AlGaAs laser up to 10 GHz and from a CO2 laser up to 1 GHz. The time and frequency domain measurements were in agreement. The fast response can be explained by electron heating. The use of low optical power and a sensitive measurement system excluded any nonlinear transient processes and kinetic inductance changes in the superconducting state. At 1 GHz modulation frequency, the responsivity was ∼1.2 V/W both for 0.8 and 10.6 μm wavelengths. The sensitivity of a fast and spectrally broadband infrared detector is discussed. |
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0003-6951 |
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1639 |
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Ekström, H.; Karasik, B.; Kollberg, E.; Yngvesson, K. S. |
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Title |
Investigation of a superconducting hot electron mixer |
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Conference Article |
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Year |
1994 |
Publication |
Proc. 5th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 5th Int. Symp. Space Terahertz Technol. |
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169-188 |
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Keywords |
HEB mixers |
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Mixing at 20 GHz in niobium superconducting thin film strips in the resistive state is studied. Experiments give evidence that electron-heating is the main cause of the non linear phenomena. The requirements on the mode of operation and on the film parameters for small conversion loss and the possibility of conversion gain are discussed. Measurements indicate a minimum intrinsic conversion loss around 1 dB with a sharp drop for the lowest voltage bias-points, and a DSB mixer noise temperature between 100 and 450 K at 20 GHz. The device output noise temperature at the mixer operating point can be as low as 30-50 K. A simple theory is presented, which is based on the assumption that the small signal resistance is linearly dependent on power. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies. |
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1642 |
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Gol'tsman, G.; Jacobsson, S.; Ekstrom, H.; Karasik, B.; Kollberg, E.; Gershenzon, E. |
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Title |
Slot-line tapered antenna with NbN hot electron mixer for 300-360 GHz operation |
Type |
Conference Article |
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Year |
1994 |
Publication |
Proc. 5th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 5th Int. Symp. Space Terahertz Technol. |
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209-213a |
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NbN HEB mixers |
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NbN hot-electron mixers combined with slot-line tapered antennas on Si wdnitride membranes had been fabricated. Several strips of 1 gm wide and 5 tan long made from 100 A NbN film are inserted into the slot antenna. IV-curves under local oscillator power in 300-350 GHz frequency range and conversion gain dependencies on intermediate fre- quency in the 0.1-1 GHz range are measured and compared with that for 100 GHz frequency band. Our results show that pumped IV-curves and intermediate frequency bands are different for 100 GHz and 300 GHz frequency ranges. The interpretation exploits the fact that for the lowest radiation frequency the superconducting energy gap is larger than the radiation quantum energy while they are comparable at the higher frequency. Tha results show that such mixers have good perspectives for terahertz receiving technology. |
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1643 |
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0kunev, 0.; Dzardanov, A.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Gol'tsman, G.; Gershenzon, E. |
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Title |
NbN hot electron waveguide mixer for 100 GHz operation |
Type |
Conference Article |
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Year |
1994 |
Publication |
Proc. 5th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 5th Int. Symp. Space Terahertz Technol. |
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214-224 |
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waveguide NbN HEB mixers |
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NbN is a promising superconducting material used to develope hot- electron superconducting mixers with an IF bandwidth over 1 GHz. In the 100 GHz frequency range, the following parameters were obtained for NbN films 50 A thick: the noise temperature of the receiver (DSB) 1000 K; the conversion losses 10 d13, the IF bandwidth 1 GHz; the local oscillator power 1 /LW. An increase of NbN film thickness up to 80-100 A and increase of working temperature up to 7-8 K, and a better mixer matching may allow to broader the IF band up to 3 Gllz, to reduce the conversion losses down to 3-5 dB and the noise tempera- ture down to 200-300 K. |
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1644 |
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Elantev, Andrey I.; Karasik, Boris S. |
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Title |
Noise temperature of a superconducting hot-electron mixer |
Type |
Conference Article |
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1994 |
Publication |
Proc. 5th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 5th Int. Symp. Space Terahertz Technol. |
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225 |
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HEB mixers |
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1645 |
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Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
A fast infrared detector based on patterned YBCO thin film |
Type |
Journal Article |
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1994 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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Volume |
7 |
Issue |
5 |
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321-323 |
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Keywords |
YBCO HTS detector |
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Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time. |
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0953-2048 |
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1646 |
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Sergeev, A.; Semenov, A.; Trifonov, V.; Karasik, B.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Heat transfer in YBaCuO thin film/sapphire substrate system |
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Journal Article |
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1994 |
Publication |
J. Supercond. |
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J. Supercond. |
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7 |
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2 |
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341-344 |
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YBCO films |
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The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model. |
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0896-1107 |
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1647 |
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Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation |
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Journal Article |
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1994 |
Publication |
Phys. Rev. B Condens. Matter. |
Abbreviated Journal |
Phys. Rev. B Condens. Matter. |
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49 |
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13 |
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9091-9096 |
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YBCO films |
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The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface. |
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0163-1829 |
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PMID:10009690 |
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1648 |
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Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. |
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Title |
Electron-phonon interaction in disordered NbN films |
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Journal Article |
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1994 |
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Phys. B Condens. Mat. |
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Phys. B Condens. Mat. |
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194-196 |
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1355-1356 |
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NbN films |
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Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films. |
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0921-4526 |
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