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Smirnov, A. V.; Larionov, P. A.; Finkel, M. I.; Maslennikov, S. N.; Voronov, B. M.; Gol'tsman, G. N. |
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Title |
NbZr films for THz phonon-cooled HEB mixers |
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Conference Article |
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2008 |
Publication |
Proc. 19th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 19th Int. Symp. Space Terahertz Technol. |
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Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
44-47 |
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HEB, NbZr, material search |
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Groningen, Netherlands |
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577 |
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Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Optical coupling and conversion gain for NbN HEB mixer at THz frequencies |
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Conference Article |
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1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
47-50 |
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NbN HEB mixers |
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Charlottesville, Virginia |
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1601 |
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Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Goltsman, G. N. |
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Title |
Fabrication and characterisation of NbN HEB mixers with in situ gold contacts |
Type |
Conference Article |
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Year |
2008 |
Publication |
Proc. 19th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 19th Int. Symp. Space Terahertz Technol. |
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Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
62-67 |
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Keywords |
HEB, mixer, NbN, in-situ contacts |
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We present our recent results of the fabrication and testing of NbN hot-electron bolometer mixers with in situ gold contacts. An intermediate frequency bandwidth of about 6 GHz has been measured for the mixers made of a 3.5-nm NbN film on a plane Si substrate with in situ gold contacts, compared to 3.5 GHz for devices made of the same film with ex situ gold contacts. The increase in the intermediate frequency bandwidth is attributed to additional diffusion cooling through the improved contacts, which is further supported by the its dependence on the bridge length: intermediate frequency bandwidths of 3.5 GHz and 6 GHz have been measured for devices with lengths of 0.35 μm and 0.16 μm respectively at a local oscillator frequency of 300 GHz near the superconducting transition. At a local oscillator frequency of 2.5 THz the receiver has offered a DSB noise temperature of 950 K. When compared to the previous result of 1300 K obtained at the same local oscillator frequency for devices fabricated with an ex situ route, such a low value of the noise temperature may also be attributed to the improved gold contacts. |
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Groningen, Netherlands |
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412 |
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Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G. |
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Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation |
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Abstract |
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2014 |
Publication |
Proc. 25th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 25th Int. Symp. Space Terahertz Technol. |
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Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
71 |
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carbon nanotubes, CNT |
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This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented. |
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1361 |
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Author |
Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz |
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Conference Article |
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Year |
1998 |
Publication |
Proc. 9th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 9th Int. Symp. Space Terahertz Technol. |
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Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
105-114 |
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NbN HEB mixers |
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1587 |
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Author |
Tretyakov, Ivan; Kaurova, N.; Voronov, B. M.; Goltsman, G. N. |
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Title |
About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers |
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Abstract |
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2018 |
Publication |
Proc. 29th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 29th Int. Symp. Space Terahertz Technol. |
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Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
113 |
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NbN HEB mixer |
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Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) and NbN bridge length are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb ≪ Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. |
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1313 |
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Author |
Gousev, Yu. P.; Olsson, H. K.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz |
Type |
Conference Article |
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Year |
1998 |
Publication |
Proc. 9th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 9th Int. Symp. Space Terahertz Technol. |
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Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
121-129 |
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NbN HEB mixers |
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We report on noise temperature measurements for a NbN phonon-cooled hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. Radiation was coupled to the mixer, placed in a vacuum chamber of He cryostat, by means of a planar spiral antenna and a Si immersion lens. A backward-wave oscillator, tunable throughout the spectral range, delivered an output power of few 1.1W that was enough for optimum operation of the mixer. At 4.2 K ambient temperature and 1.025 THz radiation frequency, we obtained a receiver noise temperature of 1550 K despite of using a relatively noisy room-temperature amplifier at the intermediate frequency port. The noise temperature was fairly constant throughout the entire operation range and for intermediate frequencies from 1 GHz to 2 GHz. |
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1588 |
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Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G. N. |
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Title |
NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling |
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Conference Article |
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2009 |
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Proc. 20th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 20th ISSTT |
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Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
151-154 |
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HEB, mixer, bandwidth, noise temperatue, in-situ contacts, in situ contacts |
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Charlottesville, USA |
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590 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
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Title |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
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Conference Article |
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1997 |
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Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
163-166 |
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S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN |
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1603 |
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Semenov, A. D.; Hübers, Heinz-Wilhelm; Richter, H.; Birk, M.; Krocka, M.; Mair, U.; Vachtomin, Yu. B.; Finkel, M. I.; Antipov, S. V.; Voronov, B. M.; Smirnov, K. V.; Kaurova, N. S.; Drakinski, V. N.; Gol'tsman, G. N. |
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Title |
Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers |
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Journal Article |
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2003 |
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IEEE Trans. Appl. Supercond. |
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13 |
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2 |
Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
168-171 |
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NbN HEB mixers |
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We present recent results showing the development of superconducting NbN hot-electron bolometer mixer for German receiver for astronomy at terahertz frequencies and terahertz limb sounder. The mixer is incorporated into a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and backed on a silicon lens. The hybrid antenna had almost frequency independent and symmetric radiation pattern slightly broader than expected for a diffraction limited antenna. At 2.5 THz the best 2200 K double side-band receiver noise temperature was achieved across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. For this operation regime, a receiver conversion efficiency of -17 dB was directly measured and the loss budget was evaluated. The mixer response was linear at load temperatures smaller than 400 K. Implementation of the MgO buffer layer on Si resulted in an increased 5.2 GHz gain bandwidth. The receiver was tested in the laboratory environment by measuring a methanol emission line at 2.5 THz. |
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