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Gol'tsman, G. N.; Karasik, B. S.; Svechnikov, S. I.; Gershenzon, E. M.; Ekström, H.; Kollberg E. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
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Title |
Noise temperature of NbN hot—electron quasioptical superconducting mixer in 200-700 GHz range |
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1995 |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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268 |
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NbN HEB mixers, noise temperature |
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The electron heating effect in superconducting films is becoming very attractive for the development of THz range mixers because of the absence of frequency limitations inherent in the bolometric mechanism. However, the evidence for the spectral dependence of the position of optimal operating point has been found recently for NbN thin film devices 1.2 • The effect is presumably attributed to the variation in the absorption of radiation depending on the frequency. Since the resistive state is not spatially uniform the coupling efficiency of the mixer device with radiation can be different for frequencies larger than Zeilh and those smaller than 2Alh (d is the effective superconducting gap in the resistive state). To study the effect more thoroughly we have investigated the noise temperature of quasioptical NbN mixer device with broken hue tapered slot antenna in the frequency range 200-700 GHz. The device consists of several (5-10) parallel strips 1 jim wide and 6-7 tun thick made from NbN film on Si0 2 -Si 3 N 4 -Si membrane. The strips are connected with the gold contacts of the slot-line antenna which serves both as bias and IF leads. We used backward wave oscillators as LO sources and a standard hot/cold load technique for noise temperature measurements. The frequency dependence of noise temperature is mainly determined by two factors: frequency properties of the antenna and frequency dependence of the NbN film impedance. To separate both factors we monitored the frequency dependence of the device responsivity in the detector mode at a higher temperature within the superconducting transition where the impedance of NbN film is close to its normal resistance. In this case the impedance of the device itself is frequency independent. The experimental results will be reported at the Symposium. 1. G. Gollsman, S. Jacobsson, H. EkstrOm, B. Karasik, E. Kollberg, and E. Gershenzon, “Slot-line tapered antenna with NbN hot electron mixer for 300-360 GHz operation,” Proc of the 5th Int. Symp. on Space Terahertz Technology, pp. 209-213a, May 10-12,1994. 2. B.S. Karasik, G.N. Gol i tsman, B.M. Voronov, S.I. Svechnikov, E.M. Gershenzon, H. Ekstrom, S. Jacobsson, E. Kollberg, and K.S. Yngvesson, “Hot electron quasioptical NbN superconducting mixer,” presented at the ASC94, submitted to IEEE Trans. on Appl. Superconductivity. |
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Ekström, H.; Karasik, B.; Kollberg, E.; Gol'tsman, G.; Gershenzon, E. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
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Title |
350 GHz NbN hot electron bolometer mixer |
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Conference Article |
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1995 |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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269-283 |
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NbN HEB mixers |
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Superconducting NbN hot-electron bolometer (HEB) mixer devices have been fabricated and measured at 350 GHz. The HEB is integrated with a double dipole antenna on an extended crystalline quartz hyper hemispherical substrate lens. Heterodyne measurement gave a -3 dB bandwidth, mainly determined by the electron- phonon interaction time, of about 680 and 1000 MHz for two different films with Tc = 8.5 and 11 K respectively. The measured DSB receiver noise temperature is around 3000 K at 800 MHz IF frequency. The main contribution to the output noise from the device is due to electron temperature fluctuations with the equivalent output noise temperature TFL-100 K. TH, has the same frequency dependence as the IF response. The contribution from Johnson noise is of the order of T. The RF coupling loss is estimated to be = 6 dB. The film with lower Tc, had an estimated intrinsic low-frequency conversion loss = 7 dB, while the other film had a conversion loss as high as 14 dB. The difference in intrinsic conversion loss is explained by less uniform absorption of radiation. Measurements of the small signal impedance shows a transition of the output impedance from the DC differential resistance Rd=dV/dI in the low frequency limit to the DC resistance R 0 =Uoff 0 in the bias point for frequencies above 3 GHz. We judge that the optimum shape of the IV-characteristic is more easily obtained at THz frequencies where the main restriction in performance should come from problems with the RF coupling. |
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Kawamura, J.; Hunter, T. R.; Tong, C. Y. E.; Blundell, R.; Papa, D. C.; Patt, F.; Peters, W.; Wilson, T.; Henkel, C.; Goltsman, G.; Gershenzon, E. |
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Ground-based terahertz CO spectroscopy towards Orion |
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2002 |
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A&A |
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A&A |
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394 |
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1 |
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271-274 |
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HEB mixers, applications |
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Using a superconductive hot-electron bolometer heterodyne receiver on the 10-m Heinrich Hertz Telescope on Mount Graham, Arizona, we have obtained velocity-resolved 1.037 THz CO () spectra toward several positions along the Orion Molecular Cloud (OMC-1) ridge. We confirm the general results of prior observations of high-J CO lines that show that the high temperature, , high density molecular gas, , is quite extended, found along a ~ region centered on BN/KL. However, our observations have significantly improved angular resolution, and with a beam size of we are able to spatially and kinematically discriminate the emission originating in the extended quiescent ridge from the very strong and broadened emission originating in the compact molecular outflow. The ridge emission very close to the BN/KL region appears to originate from two distinct clouds along the line of sight with and ≈ . The former component dominates the emission to the south of BN/KL and the latter to the north, with a turnover point coincident with or near BN/KL. Our evidence precludes a simple rotation of the inner ridge and lends support to a model in which there are multiple molecular clouds along the line of sight towards the Orion ridge. |
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322 |
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Cherednichenko, S.; Kroug, M.; Merkel, H.; Kollberg, E.; Loudkov, D.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Gershenzon, E. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
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Title |
Local oscillator power requirement and saturation effects in NbN HEB mixers |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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273-285 |
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NbN HEB mixers, LO power, local oscillator power, saturation effect, dynamic range |
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The local oscillator power required for NbN hot-electron bolometric mixers (P LO ) was investigated with respect to mixer size, critical temperature and ambient temperature. P LO can be decreased by a factor of 10 as the mixer size decreases from 4×0.4 µm 2 to 0.6×0.13 µm 2 . For the smallest volume mixer the optimal local oscillator power was found to be 15 nW. We found that for such mixer no signal compression was observed up to an input signal of 2 nW which corresponds to an equivalent input load of 20,000 K. For a constant mixer volume, reduction of T c can decrease optimal local oscillator power at least by a factor of 2 without a deterioration of the receiver noise temperature. Bath temperature was found to have minor effect on the receiver characteristics. |
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San Diego, CA, USA |
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Jet Propulsion Laboratory, California Inst.it.u.t.e of Technology |
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Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
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Title |
Gain bandwidth and noise temperature of NbTiN HEB mixer |
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2003 |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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276-285 |
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NbTiN HEB mixer |
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We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz. |
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1500 |
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Lobanov, Y.; Tong, C.; Blundell, R.; Gol'tsman, G. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
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A study of direct detection effect on the linearity of hot electron bolometer mixers |
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2009 |
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Proc. 20th Int. Symp. Space Terahertz Technol. |
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Proc. 20th ISSTT |
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282-287 |
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HEB mixer, direct detection effect |
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We have performed a study of how direct detection affects the linearity and hence the calibration of an HEB mixer. Two types of waveguide HEB devices have been used: a 0.8 THz HEB mixer and a 1.0 THz HEB mixer which is ~5 times smaller than the former. Two independent experimental approaches were used. In the ΔG/G method, the conversion gain of the HEB mixer is first measured as a function of the bias current for a number of bias voltages. At each bias setting, we carefully measure the change in the operating current when the input loads are switched. From the measured data, we can derive the expected difference in gain between the hot and cold loads. In the second method (injection method [1]), the linearity of the HEB mixer is independently measured by injecting a modulated signal for different input load temperatures. The results of both approaches confirm that there is gain compression in the operation of HEB mixers. Based on the results of our measurements, we discuss the impact of direct detection effects on the operation of HEB mixers. |
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RPLAB @ gujma @ |
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724 |
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Gerecht, E.; Musante, C. F.; Schuch, R.; Lutz, C. R.; Jr.; Yngvesson, K. S.; Mueller, E. R.; Waldivian, J.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Hot electron detection and mixing experiments in NbN at 119 micrometer wavelength |
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Conference Article |
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1995 |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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284-293 |
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NbN HEB mixers, detectors |
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We have performed preliminary experiments with the goal of demonstrating a Hot Electron Bolometric (HEB) mixer for a 119 micrometer wavelength (2.5 THz). We have chosen a NbN device of size 700 x 350 micrometers. This device can easily be coupled to a laser LO source, which is advantageous for performing a prototype experiment. The relatively large size of the device means that the LO power required is in the mW range; this power can be easily obtained from a THz laser source. We have measured the amount of laser power actually absorbed in the device, and from this have estimated the best optical coupling loss to be about 10 di . We are developing methods for improving the optical coupling further. Preliminary measurements of the response of the device to a chopped black-body have not yet resulted in a measured receiver noise temperature. We expect to be able to complete this measurement in the near future. |
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Hübers, H.-W.; Semenov, A. D.; Richter, H.; Schubert, J.; Hadjiloucas, S.; Bowen, J. W.; Gol'tsman, G.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Antenna pattern of the quasi-optical hot-electron bolometric mixer at terahertz frequencies |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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286-296 |
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NbN HEB mixers |
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San Diego, CA, USA |
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Tong, C.-Y. Edward; Meledin, Denis; Blundell, Raymond; Erickson, Neal; Kawamura, Jonathan; Mehdi, Imran; Gol'tsman, Gregory |
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A 1.5 THz hot-electron bolometer mixer operated by a planar diode-based local oscillator |
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2003 |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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waveguide NbN HEB mixers |
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We describe a 1.5 THz heterodyne receiver based on a superconductin g hot-electron bolometer mixer, which is pumped by an all-solid-state local oscillator chain. The bolometer is fabricated from a 3.5 nm-thick niobium nitride film deposited on a quartz substrate with a 200 nm-thick magnesium oxide buffer layer. The bolometer measures 0.15 fun in width and 1.5 1..tm in length. The chip consisting of the bolometer and mixer circuitry is incorporated in a fixed-tuned waveguide mixer block with a corru g ated feed horn. The local oscillator unit comprises of a cascade of four planar doublers followin g a MMIC-based W-band power amplifier. The local oscillator is coupled to the mixer using a Martin-Puplett interferometer. The local oscillator output power needed for optimal receiver performance is approximately 1 to 2 11W, and the chain is able to provide this power at a number of frequency points between 1.45 and 1.56 THz. By terminating the rf input with room temperature and 77 K loads, a Y-factor of 1.11 (DSB) has been measured at a local oscillator frequency of 1.476 THz at 3 GHz intermediate frequency. |
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Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
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The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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290-302 |
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NbN HEB mixers, fabrication process |
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We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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