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Nebosis RS, Heusinger MA, Semenov AD, Lang PT, Schatz W, Steinke R, et al. Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses. Opt Lett. 1993;18(2):96–7.
Abstract: We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment.
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Gershenzon EM, Gol'tsman GN, Zorin MA, Karasik BS, Trifonov VA. Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation. In: Council on Low-temp. Phys.; 1994. p. 82–3.
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Gershenzon EM, Gol'tsman GN. Transitions of electrons between excited states of donors in germanium. JETP Lett. 1971;14(2):63–5.
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Słysz W, Węgrzecki M, Bar J, Grabiec P, Gol'tsman GN, Verevkin A, et al. NbN superconducting single-photon detector coupled with a communication fiber. Elektronika : konstrukcje, technologie, zastosowania. 2005;46(6):51–2.
Abstract: We present novel superconducting single-photon detectors (SSPDs), based on ultrathin NbN films, designed for fiber-based quantum communications (lambda = 1.3 žm and 1.55 žm). For fiber-based operation, our SSPDs contain a special micromechanical construction integrated with the NbN structure, which enables efficient and mechanically very stabile fiber coupling. The detectors combine GHz counting rate, high quantum efficiency and very low level of dark counts. At 1.3 – 1.55 žm wavelength range our detector exhibits a quantum efficiency up to 10%.
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Arutyunov KY, Ramos-Alvarez A, Semenov AV, Korneeva YP, An PP, Korneev AA, et al. Superconductivity in highly disordered NbN nanowires. Nanotechnol. 2016;27(47):47lt02 (1 to 8).
Abstract: The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links.
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Gerecht E, Musante CF, Yngvesson KS, Waldman J, Gol'tsman GN, Yagoubov PA, et al. Optical coupling and conversion gain for NbN HEB mixer at THz frequencies. In: Proc. 4-th Int. Semicond. Device Research Symp.; 1997. p. 47–50.
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Smirnov AV, Larionov PA, Finkel MI, Maslennikov SN, Voronov BM, Gol'tsman GN. NbZr films for THz phonon-cooled HEB mixers. In: Proc. 19th Int. Symp. Space Terahertz Technol. Groningen, Netherlands; 2008. p. 44–7.
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Semenov AD, Hübers H–W, Schubert J, Gol'tsman GN, Elantiev AI, Voronov BM, et al. Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer. In: Proc. 11th Int. Symp. Space Terahertz Technol.; 2000. p. 39–48.
Abstract: We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens.
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Chen J, Kang L, Jin BB, Xu WW, Wu PH, Zhang W, et al. Properties of terahertz superconducting hot electron bolometer mixers. Int J Terahertz Sci Technol. 2008;1(1):37–41.
Abstract: A quasi-optical superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixer has been fabricated and measured in the terahertz (THz) frequency range of 0.5~2.52 THz. A receiver noise temperature of 2000 K at 2.52 THz has been obtained for the mixer without corrections. Also, the effect of a Parylene C anti-reflection (AR) coating on the silicon (Si) lens has been studied.
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Karasik BS, Il'in KS, Ptitsina NG, Gol'tsman GN, Gershenzon EM, Pechen' EV, et al. Electron-phonon scattering rate in impure NbC films [abstract]. In: NASA/ADS.; 1998. Y35.08.
Abstract: The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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