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Lobanov YV, Tong C-YE, Hedden AS, Blundell R, Voronov BM, Gol'tsman GN. Direct measurement of the gain and noise bandwidths of HEB mixers. IEEE Trans Appl Supercond. 2011;21(3):645–8.
Abstract: The intermediate frequency (IF) bandwidth of a hot electron bolometer (HEB) mixer is an important parameter of the mixer, in that it helps to determine its suitability for a given application. With the availability of wideband low noise amplifiers, it is simple to measure the performance of an HEB mixer over a wide range of IF at a fixed LO frequency using the standard Y-factor method. This in-situ method allows us to measure both the gain and noise bandwidths simultaneously. We have also measured mixer output impedance with a vector network analyser. Intrinsic time constant has been extracted from the impedance data and compared to the mixer's bandwidths determined from receiver Y-factor measurement.
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Schubert J, Semenov A, Hübers H-W, Gol'tsman G, Schwaab G, Voronov B, et al. Broad-band terahertz NbN hot-electron bolometric mixer. In: Inst. Phys. Conf. Vol 167.; 1999. p. 663–6.
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Kawamura J, Blundell R, Tong C-YE, Papa DC, Hunter TR, Paine SN, et al. Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation. IEEE Trans Microw Theory Techn. 2000;48(4):683–9.
Abstract: In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season.
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Yagoubov P, Kroug M, Merkel H, Kollberg E, Schubert J, Hubers HW, et al. Hot electron bolometric mixers based on NbN films deposited on MgO substrates. In: Inst. Phys. Conf. Ser. Vol 167. Barcelona, Spain; 1999. p. 687–90.
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Korneev A, Minaeva O, Rubtsova I, Milostnaya I, Chulkova G, Voronov B, et al. Superconducting single-photon ultrathin NbN film detector. Quantum Electronics. 2005;35(8):698–700.
Abstract: Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps.
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Khasminskaya S, Pyatkov F, Słowik K, Ferrari S, Kahl O, Kovalyuk V, et al. Fully integrated quantum photonic circuit with an electrically driven light source. Nat Photon. 2016;10(11):727–32.
Abstract: Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices.
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Gershenzon EM, Gol'tsman GN, Multanovskii VV, Ptitsyna NG. Capture of photoexcited carriers by shallow impurity centers in germanium. Sov Phys JETP. 1979;50(4):728–34.
Abstract: Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.
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Schubert J, Semenov A, Gol'tsman G, Hübers H-W, Schwaab G, Voronov B, et al. Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz. Supercond. Sci. Technol.. 1999;12(11):748–50.
Abstract: We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz).
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Gol'tsman GN, Goghidze IG, Kouminov PB, Karasik BS, Semenov AD, Gershenzon EM. Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses. J Supercond. 1994;7(4):751–5.
Abstract: The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.
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Gershenzon EM, Gol'tsman GN, Elant'ev AI, Karasik BS, Potoskuev SE. Intense electromagnetic radiation heating of superconductor electrons in resistive state. Fizika Nizkikh Temperatur. 1988;14(7):753–63.
Abstract: An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model.
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