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Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films |
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Journal Article |
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Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
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Volume |
27 |
Issue |
2 |
Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
1317-1320 |
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Keywords |
YBCO, HTS, Nb HEB mixers |
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A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively. |
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1941-0069 |
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1681 |
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Gershenzon, E. M.; Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation |
Type |
Journal Article |
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Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
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Volume |
27 |
Issue |
2 |
Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
1321-1324 |
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YBCO HTS detectors |
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Abstract |
Ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter waves to near infrared. With an increase in radiation frequency, the Josephson detection at the grain-boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. The electron-phonon relaxation time tau /sub eph/ is determined from direct measurements, quasi-stationary electron heating measurements, and the frequency dependence of the current at which maximum voltage shift is observed. The temperature dependence of tau /sub eph/ at T<or=40 K was found to be tau /sub eph/ approximately T/sup -1/. The results show that detectors with a response time of a few picoseconds at nitrogen temperature are attainable. |
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1941-0069 |
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1679 |
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Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits |
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Journal Article |
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2012 |
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Nat. Commun. |
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Nat. Commun. |
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3 |
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Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
1325 (1 to 10) |
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waveguide SSPD |
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Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics. |
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Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA |
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2041-1723 |
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PMID:23271658; PMCID:PMC3535416 |
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1375 |
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Milostnaya, I.; Korneev, A.; Rubtsova, I.; Seleznev, V.; Minaeva, O.; Chulkova, G.; Okunev, O.; Voronov, B.; Smirnov, K.; Gol'tsman, G.; Slysz, W.; Wegrzecki, M.; Guziewicz, M.; Bar, J.; Gorska, M.; Pearlman, A.; Kitaygorsky, J.; Cross, A.; Sobolewski, R. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Superconducting single-photon detectors designed for operation at 1.55-µm telecommunication wavelength |
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Conference Article |
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2006 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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43 |
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Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
1334-1337 |
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NbN SSPD, SNSPD |
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We report on our progress in development of superconducting single-photon detectors (SSPDs), specifically designed for secure high-speed quantum communications. The SSPDs consist of NbN-based meander nanostructures and operate at liquid helium temperatures. In general, our devices are capable of GHz-rate photon counting in a spectral range from visible light to mid-infrared. The device jitter is 18 ps and dark counts can reach negligibly small levels. The quantum efficiency (QE) of our best SSPDs for visible-light photons approaches a saturation level of ~30-40%, which is limited by the NbN film absorption. For the infrared range (1.55µm), QE is ~6% at 4.2 K, but it can be significantly improved by reduction of the operation temperature to the 2-K level, when QE reaches ~20% for 1.55-µm photons. In order to further enhance the SSPD efficiency at the wavelength of 1.55 µm, we have integrated our detectors with optical cavities, aiming to increase the effective interaction of the photon with the superconducting meander and, therefore, increase the QE. A successful effort was made to fabricate an advanced SSPD structure with an optical microcavity optimized for absorption of 1.55 µm photons. The design consisted of a quarter-wave dielectric layer, combined with a metallic mirror. Early tests performed on relatively low-QE devices integrated with microcavities, showed that the QE value at the resonator maximum (1.55-µm wavelength) was of the factor 3-to-4 higher than that for a nonresonant SSPD. Independently, we have successfully coupled our SSPDs to single-mode optical fibers. The completed receivers, inserted into a liquid-helium transport dewar, reached ~1% system QE for 1.55 µm photons. The SSPD receivers that are fiber-coupled and, simultaneously, integrated with resonators are expected to be the ultimate photon counters for optical quantum communications. |
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1742-6588 |
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1450 |
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Author |
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
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Title |
Germanium hot-electron narrow-band detector |
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Journal Article |
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1971 |
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Sov. Radio Engineering And Electronic Physics |
Abbreviated Journal |
Sov. Radio Engineering And Electronic Physics |
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Volume |
16 |
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8 |
Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
1346 |
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Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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1741 |
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Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Electron-phonon interaction in disordered NbN films |
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Journal Article |
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1994 |
Publication |
Phys. B Condens. Mat. |
Abbreviated Journal |
Phys. B Condens. Mat. |
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194-196 |
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1355-1356 |
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NbN films |
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Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films. |
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0921-4526 |
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1649 |
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Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
![find record details (via OpenURL) openurl](https://db.rplab.ru/refbase/img/xref.gif)
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Title |
Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
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Journal Article |
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1989 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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23 |
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8 |
Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
1356-1361 |
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Ge, crystallography |
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Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Russian |
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Duplicated as 1692 |
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1691 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Semenov, A. D.; Sergeev, A. V. |
![goto web page (via DOI) doi](https://db.rplab.ru/refbase/img/doi.gif)
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Title |
Processes of electron-phonon interaction in thin YBaCuO films |
Type |
Journal Article |
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Year |
1991 |
Publication |
Phys. C: Supercond. |
Abbreviated Journal |
Phys. C: Supercond. |
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Volume |
185-189 |
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Pages ![sorted by First Page field, ascending order (up)](https://db.rplab.ru/refbase/img/sort_asc.gif) |
1371-1372 |
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YBCO HTS detectors |
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The ultrafast voltage response of YBaCuO films to laser radiation is studied and compared with previously investigated quasiparicles response to radiation of submillimeter wavelength range. Voltage shift under the visible light radiation has two components. Picosecond response realized as suppression superconductivity by nonequilibrium excess quasiparticles, response time is determined by quasiparticles recombination rate. Nanosecond response is probably due to bolometric effect. |
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0921-4534 |
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no |
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Serial |
1676 |
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Author |
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
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Journal Article |
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1976 |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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10 |
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1379-1383 |
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Ge, cyclotron resonance, charged impurities, |
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1772 |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
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Title |
Effect of a strong magnetic field on the spectrum of donors in InSb |
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Journal Article |
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1978 |
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Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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11 |
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12 |
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1395-1397 |
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InSb, spectrum of donors, strong magnetic field |
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1725 |
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