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Lee BG, Doany FE, Assefa S, Green W, Yang M, Schow CL, et al. 20-μm-pitch eight-channel monolithic fiber array coupling 160 Gb/s/channel to silicon nanophotonic chip. In: Conf. OFC/NFOEC.; 2010. p. 1–3.
Abstract: A multichannel tapered coupler interfacing standard 250-μm-pitch low-NA polarization-maintaining fiber arrays with ultra-dense 20-μm-pitch high-NA silicon waveguides is designed, fabricated, and tested, demonstrating coupling losses below 1 dB and injection bandwidths of 160 Gb/s/channel.
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Tretyakov I, Svyatodukh S, Perepelitsa A, Ryabchun S, Kaurova N, Shurakov A, et al. Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector. Nanomaterials (Basel). 2020;10(5):1–12.
Abstract: In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
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Elmanova A, An P, Kovalyuk V, Golikov A, Elmanov I, Goltsman G. Study of silicon nitride O-ring resonator for gas-sensing applications. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012124.
Abstract: In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.
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Trifonov A, Tong C-YE, Grimes P, Lobanov Y, Kaurova N, Blundell R, et al. Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver. In: IEEE Trans. Appl. Supercond. Vol 27.; 2017. 6.
Abstract: We report on the development of a multi-pixel
Hot Electron Bolometer (HEB) receiver fabricated using
silicon membrane technology. The receiver comprises a
2 × 2 array of four HEB mixers, fabricated on a single
chip. The HEB mixer chip is based on a superconducting
NbN thin film deposited on top of the silicon-on-insulator
(SOI) substrate. The thicknesses of the device layer and
handling layer of the SOI substrate are 20 μm and 300 μm
respectively. The thickness of the device layer is chosen
such that it corresponds to a quarter-wave in silicon at
1.35 THz. The HEB mixer is integrated with a bow-tie
antenna structure, in turn designed for coupling to a
circular waveguide,
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Trifonov A, Tong CE, Lobanov Y, Kaurova N, Blundell R, Gol’tsman G. An investigation of the DC and IF performance of silicon-membrane HEB mixer elements. In: Proc. 26th Int. Symp. Space Terahertz Technol.; 2015. 40.
Abstract: We report on our initial development towards a 2x2 multi-pixel HEB waveguide mixer for operation at 1.4 THz. We have successfully fabricated devices comprising an NbN bridge integrated with antenna test structure using a silicon membrane as the supporting substrate. DC measurements of the test chips demonstrate critical current from 0.1 – 1mA depending on the size of device, with T c of around 10 K and ΔTc ~ 0.8 K.
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Komrakova S, Kovalyuk V, An P, Golikov A, Rybin M, Obraztsova E, et al. Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012135.
Abstract: In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide.
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Bakhvalova T, Belkin ME, Kovalyuk VV, Prokhodtcov AI, Goltsman GN, Sigov AS. Studying key principles for design and fabrication of silicon photonic-based beamforming networks. In: PIERS-Spring.; 2019. p. 745–51.
Abstract: In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array.
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Проходцов АИ, Голиков АД, Ан ПП, Ковалюк ВВ, Гольцман ГН. Влияние покрытия из оксида кремния на эффективность фокусирующего решеточного элемента связи из нитрида кремния. In: Proc. IWQO.; 2019. p. 201–3.
Abstract: В работе экспериментально изучена зависимость эффективности фокусирующего решеточного элемента связи от периода и фактора заполнения до и после напыления верхнего слоя из оксида кремния. Полученные данные имеют практическое значение при создании перестраиваемых интегрально-оптических устройств на нитриде кремния.
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Trifonov A, Tong C-YE, Grimes P, Lobanov Y, Kaurova N, Blundell R, et al. Development of a silicon membrane-based multipixel hot electron bolometer receiver. IEEE Trans Appl Supercond. 2017;27(4):1–5.
Abstract: We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
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Mel’nikov AP, Gurvich YA, Shestakov LN, Gershenzon EM. Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon. Jetp Lett. 2001;73(1):44–7.
Abstract: The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
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