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Tret’yakov IV, Ryabchun SA, Kaurova NS, Larionov PA, Lobastova AA, Voronov BM, et al. Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer. Tech Phys Lett. 2010;36(12):1103–5.
Abstract: Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW.
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Братман ВЛ, Литвак АГ, Суворов ЕВ. Освоение терагерцевого диапазона: источники и приложения. Успехи физ наук. 2010;181(8):867–874.
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Gaggero A, Nejad SJ, Marsili F, Mattioli F, Leoni R, Bitauld D, et al. Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl Phys Lett. 2010;97(15):3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Bonifas AP, McCreery RL. ‘Soft’ Au, Pt and Cu contacts for molecular junctions through surface-diffusion-mediated deposition. Nat Nanotech. 2010;5(8):612–617.
Abstract: Virtually all types of molecular electronic devices depend on electronically addressing a molecule or molecular layer through the formation of a metallic contact. The introduction of molecular devices into integrated circuits will probably depend on the formation of contacts using a vapour deposition technique, but this approach frequently results in the metal atoms penetrating or damaging the molecular layer. Here, we report a method of forming 'soft' metallic contacts on molecular layers through surface-diffusion-mediated deposition, in which the metal atoms are deposited remotely and then diffuse onto the molecular layer, thus eliminating the problems of penetration and damage. Molecular junctions fabricated by this method exhibit excellent yield (typically >90%) and reproducibility, and allow examination of the effects of molecular-layer structure, thickness and contact work function.
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Freer EM, Grachev O, Duan X, Martin S, Stumbo DP. High-yield self-limiting single-nanowire assembly with dielectrophoresis. Nat Nanotech. 2010;5(7):525–530.
Abstract: Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly.
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Konstantatos G, Sargent EH. Nanostructured materials for photon detection. Nat Nanotech. 2010;5(6):391–400.
Abstract: The detection of photons underpins imaging, spectroscopy, fibre-optic communications and time-gated distance measurements. Nanostructured materials are attractive for detection applications because they can be integrated with conventional silicon electronics and flexible, large-area substrates, and can be processed from the solution phase using established techniques such as spin casting, spray coating and layer-by-layer deposition. In addition, their performance has improved rapidly in recent years. Here we review progress in light sensing using nanostructured materials, focusing on solution-processed materials such as colloidal quantum dots and metal nanoparticles. These devices exhibit phenomena such as absorption of ultraviolet light, plasmonic enhancement of absorption, size-based spectral tuning, multiexciton generation, and charge carrier storage in surface and interface traps.
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Stevens MJ, Baek B, Dauler EA, Kerman AJ, Molnar RJ, Hamilton SA, et al. High-order temporal coherences of
chaotic and laser light. Opt Express. 2010;18(2):1430–7.
Abstract: We demonstrate a new approach to measuring high-order temporal coherences that uses a four-element superconducting nanowire single-photon detector. The four independent, interleaved single-photon-sensitive elements parse a single spatial mode of an optical beam over dimensions smaller than the minimum diffraction-limited spot size. Integrating this device with four-channel time-tagging electronics to generate multi-start, multi-stop histograms enables measurement of temporal coherences up to fourth order for a continuous range of all associated time delays. We observe high-order photon bunching from a chaotic, pseudo-thermal light source, measuring maximum third- and fourth-order coherence values of 5.87 ± 0.17 and 23.1 ± 1.8, respectively, in agreement with the theoretically predicted values of 3! = 6 and 4! = 24. Laser light, by contrast, is confirmed to have coherence values of approximately 1 for second, third and fourth orders at all time delays.
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Zhong T, Hu X, Wong FNC, Berggren KK, Roberts TD, Battle P. High-quality fiber-optic polarization entanglement distribution at 1.3 μm telecom wavelength. Opt Lett. 2010;35(9):1392–4.
Abstract: We demonstrate high-quality distribution of 1.3 μm polarization-entangled photons generated from a fiber-coupled periodically poled KTiOPO4 waveguide over 200 m fiber-optic cables. Time-multiplexed measurements with a 19% efficient superconducting nanowire single-photon detector at the remote location show a detected flux of 5.8 pairs / s at a pump power of 25 μW and an average two-photon quantum-interference visibility of 97.7% without subtraction of accidentals.
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Mannino G, Spinella C, Ruggeri R, La Magna A, Fisicaro G, Fazio E, et al. Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation. Appl Phys Lett. 2010;97(2):3.
Abstract: We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
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Jang YR, Yoo K-H, Park SM. Rapid thermal annealing of ZnO thin films grown at room temperature. J. Vac. Sci. Technol. A. 2010;28(2):4.
Abstract: The authors successfully obtained high quality ZnO thin films by growing them at room temperature (RT) and postannealing by rapid thermal annealing (RTA). The thin films were grown by pulsed laser deposition on Si (100) substrates at RT, and RTA was performed under various temperatures and ambient conditions. Based on the UV emission to visible emission ratio in RT photoluminescence (PL) spectra, the optimum film was obtained at annealing temperature ~700 °C in an ambient of Ar, N2, or O2 at 0.1 Torr, while the optimum annealing temperature was above 1100 °C in the air ambient at atmospheric pressure. The morphology and structure of the films in different RTA conditions were investigated by using field emission scanning electron microscopy and grazing incidence x-ray diffraction, and were discussed in conjunction with the PL data.
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