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Ekström H, Kroug M, Belitsky V, Kollberg E, Olsson H, Goltsman G, et al. Hot electron mixers for THz applications. In: Rolfe EJ, Pilbratt G, editors. Proc. 30th ESLAB.; 1996. p. 207–10.
Abstract: We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
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Kollberg EL, Gershenzon E, Goltsman G, Yngvesson KS. Hot electron mixers, the potential competition. In: Proc. ESA Symp. on Photon Detectors for Space Instrumentation.; 1992. p. 201–6.
Abstract: There is an urgent need in radio astronomy for low noise heterodyne receivers for frequencies above about 500 GHz. It is not certain that mixers based on superconducting quasiparticle tunnelling (SIS mixers) may turn out to be the answer to this need. In order to try to find an alternative way for realizing low noise heterodyne receivers for submillimeter waves, so called hot electron bolometric effects for mixing are now being investigated. Two basically different approaches are tried, one based on semiconductors and one on superconductors. Both methods are briefly discussed in this overview paper.
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Gershenzon EM, Gogidze IG, Goltsman GN, Semenov AD, Sergeev AV. Picosecond response on optical-range emission in thin YBaCuO films. Pisma v Zhurnal Tekhnicheskoi Fiziki. 1991;17(22):6–10.
Abstract: Целью настоящей работы является целенаправленный поиск пико-секундного отклика на оптическое излучение выяснение оптимальных условий его наблюдения, а также сравнение характеристик неравновесных эффектов в оптическом и субмиллиметровом диапазонах.
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Voevodin EI, Gershenzon EM, Goltsman GN, Ptitsina NG. Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure. Sov Phys and Technics of Semiconductors. 1989;23(8):843–6.
Abstract: Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.
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Aksaev EE, Gershenzon EM, Gershenson ME, Goltsman GN, Semenov AD, Sergeev AV. Prospects for using high-temperature superconductors to create electron bolometers. Pisma v Zhurnal Tekhnicheskoi Fiziki. 1989;15(14):88–93.
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Gershenzon EM, Gershenson ME, Goltsman GN, Karasik BS, Lyulkin AM, Semenov AD. Fast-response superconducting electron bolometer. Pisma v Zhurnal Tekhnicheskoi Fiziki. 1989;15(3):88–92.
Abstract: The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns.
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Gershenzon EM, Gershenson ME, Goltsman GN, Lyulkin AM, Semenov AD, Sergeev AV. Limiting characteristics of fast-response superconducting bolometers. Zhurnal Tekhnicheskoi Fiziki. 1989;59(2):11–120.
Abstract: Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
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Voevodin EI, Gershenzon EM, Goltsman GN, Ptitsina NG, Chulkova GM. Capture of free holes by charged acceptors in uniaxially deformed Ge. Fizika i Tekhnika Poluprovodnikov. 1988;22(3):540–3.
Abstract: Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии.
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Gershenzon YM, Goltsman GN, Yelantyev AI, Petrova YB, Ptitsina NG, Filatov VS. Lecture demonstrations of properties of superconductors and liquid helium. USSR Rept Phys Math JPRS UPM. 1987;24(7):51.
Abstract: New demonstrations for low temperature physics courses are described. Two transparent Dewar vacuum flasks fitting one inside the other with the external flask for nitrogen and the internal flask for helium are used. The helium temperature can be regulated in the 4.2 to 1.6 K range and the effects of reducing helium to the superfluid state at 2.17 K can be shown: boiling abruptly stops and superfluid flow appears. In order to show the electric and magnetic characteristics of superconductivity, a superconducting NbTi solenoid containing nonsuperconducting wire and germanium and superconducting Nb materials with different critical temperatures is placed in the helium refrigerant vessel. The fall of the resistance at the critical temperatures can be shown. In order to show magnetic field and superconductive current flow properties a shunt of superconductive material is connected in parallel to the coil and is enclosed in a teflon container with a heater which can vary its temperature. When it is heated and not superconductive, magnetic field effects can be demonstrated and when it is unheated and superconducting a continuous current can be demonstrated.
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Gershenzon EM, Goltsman GN, Multanovskii VV, Ptitsina NG. Kinetics of submillimeter impurity and exciton photoconduction in Ge. Optics and Spectroscopy. 1982;52(4):454–5.
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