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Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. Generation of nanosecond terahertz pulses by the optical rectification method 2012 JETP Lett. 96 94-97 details   doi
Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. Universal bottleneck for thermal relaxation in disordered metallic films 2020 JETP Lett. 111 104-108 details   doi
Gol’tsman, G. N.; Smirnov, K. V. Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures 2001 Jetp Lett. 74 474-479 details   doi
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. Energy relaxation of two-dimensional electrons in the quantum Hall effect regime 2000 JETP Lett. 71 31-34 details   doi
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409 details   doi
Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon 2001 Jetp Lett. 73 44-47 details   doi
Andreev, A. F. The thermal conductivity of the intermediate state in superconductors 1964 Sov. Phys. JETP 19 1228-1231 details   url
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. Electron-phonon interaction in ultrathin Nb films 1990 Sov. Phys. JETP 70 505-511 details   url
Kaganov, M. L.; Lifshitz, I. M.; Tanatarov, L. V. Relaxation between electrons and the crystalline lattice 1957 Sov. Phys. JETP 4 173-178 details   openurl
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Kinetics of electron and hole binding into excitons in germanium 1983 Sov. Phys. JETP 57 369-376 details   url
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