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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. url  doi
openurl 
  Title Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
  Year 1996 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 64 Issue 5 Pages 404-409  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.  
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  ISSN (up) 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no  
  Call Number Serial 1608  
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Author Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N. url  doi
openurl 
  Title Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime Type Journal Article
  Year 2020 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 128 Issue 22 Pages 224303 (1 to 11)  
  Keywords HEB, resonant tunneling diode, RTD  
  Abstract The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN (up) 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1262  
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Author Milostnaya, I.; Korneev, A.; Tarkhov, M.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G. url  doi
openurl 
  Title Superconducting single photon nanowire detectors development for IR and THz applications Type Journal Article
  Year 2008 Publication J. Low Temp. Phys. Abbreviated Journal J. Low Temp. Phys.  
  Volume 151 Issue 1-2 Pages 591-596  
  Keywords NbN SSPD, SNSPD  
  Abstract We present our progress in the development of superconducting single-photon detectors (SSPDs) based on meander-shaped nanowires made from few-nm-thick superconducting films. The SSPDs are operated at a temperature of 2–4.2 K (well below T c ) being biased with a current very close to the nanowire critical current at the operation temperature. To date, the material of choice for SSPDs is niobium nitride (NbN). Developed NbN SSPDs are capable of single photon counting in the range from VIS to mid-IR (up to 6 μm) with a record low dark counts rate and record-high counting rate. The use of a material with a low transition temperature should shift the detectors sensitivity towards longer wavelengths. We present state-of-the art NbN SSPDs as well as the results of our recent approach to expand the developed SSPD technology by the use of superconducting materials with lower T c , such as molybdenum rhenium (MoRe). MoRe SSPDs first were made and tested; a single photon response was obtained.  
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  Series Volume Series Issue Edition  
  ISSN (up) 0022-2291 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1244  
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Author Shcheslavskiy, V.; Morozov, P.; Divochiy, A.; Vakhtomin, Y.; Smirnov, K.; Becker, W. url  doi
openurl 
  Title Erratum: “Ultrafast time measurements by time-correlated single photon counting coupled with superconducting single photon detector” [Rev. Sci. Instrum. 87, 053117 (2016)] Type Miscellaneous
  Year 2016 Publication Rev. Sci. Instrum. Abbreviated Journal Rev. Sci. Instrum.  
  Volume 87 Issue 6 Pages 069901  
  Keywords SSPD, SNSPD, TCSPC, jitter  
  Abstract In the original paper1the Ref. 10 should be M. Sanzaro, N. Calandri, A. Ruggeri, C. Scarcella, G. Boso, M. Buttafava, and A. Tosi, Proc. SPIE9370, 93701T (2015).  
  Address Becker & Hickl GmbH, Nahmitzer Damm 30, Berlin 12277, Germany  
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  ISSN (up) 0034-6748 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:27370512 Approved no  
  Call Number Serial 1810  
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Author Divochiy, A.; Misiaszek, M.; Vakhtomin, Y.; Morozov, P.; Smirnov, K.; Zolotov, P.; Kolenderski, P. url  doi
openurl 
  Title Single photon detection system for visible and infrared spectrum range Type Journal Article
  Year 2018 Publication Opt. Lett. Abbreviated Journal Opt. Lett.  
  Volume 43 Issue 24 Pages 6085-6088  
  Keywords  
  Abstract We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452-2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric downconversion, where one photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as 4x10(4) in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed.  
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  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN (up) 0146-9592 ISBN Medium  
  Area Expedition Conference  
  Notes https://arxiv.org/abs/1807.04273 Approved no  
  Call Number Serial 1227  
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Author Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B. url  doi
openurl 
  Title Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion Type Journal Article
  Year 2019 Publication Opt. Lett. Abbreviated Journal Opt. Lett.  
  Volume 44 Issue 5 Pages 1198-1201  
  Keywords HEB applications  
  Abstract We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN (up) 0146-9592 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:30821747 Approved no  
  Call Number Serial 1801  
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Author Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. url  doi
openurl 
  Title GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits Type Journal Article
  Year 2003 Publication Microelectronic Engineering Abbreviated Journal Microelectronic Engineering  
  Volume 69 Issue 2-4 Pages 274-278  
  Keywords NbN SSPD, SNSPD, applications  
  Abstract We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics.  
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  ISSN (up) 0167-9317 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1511  
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Author Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R. url  doi
openurl 
  Title Nano-structured superconducting single-photon detectors Type Journal Article
  Year 2004 Publication Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Abbreviated Journal  
  Volume 520 Issue 1-3 Pages 527-529  
  Keywords NbN SSPD, SNSPD  
  Abstract NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.  
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  ISSN (up) 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1495  
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. url  doi
openurl 
  Title Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements Type Journal Article
  Year 2011 Publication Semicond. Sci. Technol. Abbreviated Journal Semicond. Sci. Technol.  
  Volume 26 Issue 2 Pages 025013  
  Keywords AlGaAs/GaAs heterojunctions  
  Abstract We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN (up) 0268-1242 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1215  
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Author Gol'tsman, G.; Maslennikov, S.; Finkel, M.; Antipov, S.; Kaurova, N.; Grishina, E.; Polyakov, S.; Vachtomin, Y.; Svechnikov, S.; Smirnov, K.; Voronov, B. url  doi
openurl 
  Title Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer Type Conference Article
  Year 2006 Publication Proc. MRS Abbreviated Journal Proc. MRS  
  Volume 935 Issue Pages 210 (1 to 6)  
  Keywords NbN HEB mixers  
  Abstract Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz.  
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  Series Volume Series Issue Edition  
  ISSN (up) 0272-9172 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1440  
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