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Romanov NR, Zolotov PI, Vakhtomin YB, Divochiy AV, Smirnov KV. Electron diffusivity measurements of VN superconducting single-photon detectors. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051032.
Abstract: The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
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Zolotov PI, Divochiy AV, Vakhtomin YB, Morozov PV, Seleznev VA, Smirnov KV. Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range. In: J. Phys.: Conf. Ser. Vol 917.; 2017. 062037.
Abstract: We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range.
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Vasilev DD, Malevannaya EI, Moiseev KM, Zolotov PI, Antipov AV, Vakhtomin YB, et al. Influence of deposited material energy on superconducting properties of the WSi films. In: IOP Conf. Ser.: Mater. Sci. Eng. Vol 781.; 2020. 012013 (1 to 6).
Abstract: WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
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Antipov AV, Seleznev VA, Vakhtomin YB, Morozov PV, Vasilev DD, Malevannaya EI, et al. Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range. In: IOP Conf. Ser.: Mater. Sci. Eng. Vol 781.; 2020. 012011 (1 to 5).
Abstract: Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.
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Lobanov YV, Vakhtomin YB, Pentin IV, Khabibullin RA, Shchavruk NV, Smirnov KV, et al. Characterization of the THz quantum cascade laser using fast superconducting hot electron bolometer. EPJ Web Conf. 2018;195:04004 (1 to 2).
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Vorobyov VV, Kazakov AY, Soshenko VV, Korneev AA, Shalaginov MY, Bolshedvorskii SV, et al. Superconducting detector for visible and near-infrared quantum emitters [Invited]. Opt Mater Express. 2017;7(2):513–26.
Abstract: Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500–1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial.
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Baeva EM, Sidorova MV, Korneev AA, Smirnov KV, Divochy AV, Morozov PV, et al. Thermal properties of NbN single-photon detectors. Phys Rev Applied. 2018;10(6):064063 (1 to 8).
Abstract: We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
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