|
|
Gershenzon EM, Gol'tsman GN, Multanovskii VV, Ptitsina NG. Cross section for binding of free carriers into excitons in germanium. JETP Lett. 1981;33(11):574.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Ptitsina NG. Population and lifetime of excited states of shallow impurities in Ge. Sov Phys JETP. 1979;49(2):355–62.
Abstract: An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Multanovskii VV, Ptitsyna NG. Capture of photoexcited carriers by shallow impurity centers in germanium. Sov Phys JETP. 1979;50(4):728–34.
Abstract: Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Kagane ML. Observation of free carrier resonances in p-type germanium at submillimeter wavelengths. Sov Phys Solid State. 1978;20(4):573–9.
Abstract: The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.
|
|
|
|
Blagosklonskaya LE, Gershenzon EM, Goltsman GN, Elantev AI. Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors. In: Izv. Akad. Nauk SSSR, Seriya Fizicheskaya. Vol 42. Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia; 1978. p. 1231–4.
|
|
|
|
Blagosklonskaya LE, Gershenzon EM, Gol’tsman GN, Elant’ev AI. Effect of a strong magnetic field on the spectrum of donors in InSb. Sov Phys Semicond. 1978;11(12):1395–7.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Kagane ML. Energy spectrum of acceptors in germanium and its response to a magnetic field. Sov Phys JETP. 1977;45(4):769–76.
Abstract: We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.
|
|
|
|
Gershenzon EM, Gol'tsman GN, Elant'ev AI. Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field. Sov Phys JETP. 1977;45(3):555–65.
Abstract: The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
|
|
|
|
Blagosklonskaya LE, Gershenzon EM, Gol'tsman GN, Elant'ev AI. Effect of a high magnetic field on the spectrum of donors in InSb. Fizika i Tekhnika Poluprovodnikov. 1977;11(12):2373–5.
|
|
|
|
Gershenzon EM, Orlova SL, Orlov LA, Ptitsina NG, Rabinovich RI. Intervalley cyclotron-impurity resonance of electrons in n-Ge. JETP Lett. 1976;24(3):125–8.
|
|
